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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4002-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
566 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
BYD33GGP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,894 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
MBR10H45-E3/45DIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,550 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 630 mV @ 10 A | |
|
VS-30EPF04PBFDIODE GEN PURP 400V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,703 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
BYD33GGPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,120 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
MBR10H45HE3/45DIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,382 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 630 mV @ 10 A | |
|
|
VS-30EPF12PBFDIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,605 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 1200 V | 1200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
BYD33JGP-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,057 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
MBR10H50-E3/45DIODE SCHOTTKY 50V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,164 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A | |
|
|
VS-40EPF02PBFDIODE GEN PURP 200V 40A TO247AC Vishay General Semiconductor - Diodes Division |
2,782 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 200 V | 200 V | 40A | -40°C ~ 150°C | 1.25 V @ 40 A | ||
|
|
BYD33JGPHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,025 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | - | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
MBR10H60-E3/45DIODE SCHOTTKY 60V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,105 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A | |
|
|
VS-40EPF10PBFDIODE GEN PURP 1KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,260 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 450 ns | 100 µA @ 1000 V | 1000 V | 40A | -40°C ~ 150°C | 1.4 V @ 40 A | ||
|
|
BYD33KGP-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
MBR10H60HE3/45DIODE SCHOTTKY 60V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,973 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A | |
|
|
1N3611GP-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,111 | - |
RFQ |
データシート |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
VS-40EPF12PBFDIODE GEN PURP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 40A | -40°C ~ 150°C | 1.4 V @ 40 A | ||
|
CS2G-E3/IDIODE GPP 2A 400V DO-214AA SMB Vishay General Semiconductor - Diodes Division |
310 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 400 V | 400 V | 1.6A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
SB560-E3/73DIODE SCHOTTKY 60V 5A DO201AD Vishay General Semiconductor - Diodes Division |
789 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 5A | -65°C ~ 150°C | 650 mV @ 5 A | |
|
|
BYD33KGPHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,146 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 300 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | - |
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