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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYW27-400GPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,477 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 200 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
FGP50D-E3/54DIODE GEN PURP 200V 5A GP20 Vishay General Semiconductor - Diodes Division |
2,710 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
VS-20ETF02FPPBFDIODE GEN PURP 200V 20A TO220FP Vishay General Semiconductor - Diodes Division |
2,116 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
MBR16H50HE3/45DIODE SCHOTTKY 50V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,915 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | |
|
|
1N4001GPHE3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
データシート |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYX10GP-E3/73DIODE GEN PURP 1.6KV 360MA DO204 Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1600 V | 1600 V | 360mA | -65°C ~ 175°C | 1.6 V @ 2 A | |
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VSB2200S-M3/54DIODE SCHOTTKY 200V 2A DO204AL Vishay General Semiconductor - Diodes Division |
2,050 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 4V, 1MHz | - | 40 µA @ 200 V | 200 V | 2A | -40°C ~ 150°C | 1.23 V @ 2 A |
|
|
VS-20ETF10FPPBFDIODE GEN PURP 1KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
2,228 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | ||
|
|
MBR16H60-E3/45DIODE SCHOTTKY 60V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,262 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | |
|
RMPG06D-E3/54DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
149 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CS3K-E3/IDIODE GPP 800V 2A DO-214AB SMC Vishay General Semiconductor - Diodes Division |
140 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
V20DL45HM3_A/IDIODE SCHOTTKY 45V 20A TO263AC Vishay General Semiconductor - Diodes Division |
575 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.5 mA @ 45 V | 45 V | 20A | -40°C ~ 150°C | 640 mV @ 20 A |
|
SS10PH45HM3_A/HDIODE SCHOTTKY 45V 10A TO277A Vishay General Semiconductor - Diodes Division |
162 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 4V, 1MHz | - | 80 µA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 720 mV @ 10 A |
|
1N5418TRDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
647 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
1N4002GP-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,345 | - |
RFQ |
データシート |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYX10GPHE3/73DIODE GEN PURP 1.6KV 360MA DO204 Vishay General Semiconductor - Diodes Division |
2,939 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 1600 V | 1600 V | 360mA | -65°C ~ 175°C | 1.6 V @ 2 A | |
|
VSB3200-M3/54DIODE SCHOTTKY 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,657 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 175pF @ 4V, 1MHz | - | 60 µA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 1.2 V @ 3 A |
|
|
VS-20ETF12FPPBFDIODE GEN PURP 1.2KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,470 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | ||
|
|
MBR16H60HE3/45DIODE SCHOTTKY 60V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,484 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | |
|
|
1N4002GPE-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,283 | - |
RFQ |
データシート |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
- 1500+ 日平均RFQ
- 20,000.000 標準製品ユニット
- 1800+ 世界中のメーカー
- 15,000+ 在庫倉庫
