トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NE5510279A-T1-A

NE5510279A-T1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,114 -

RFQ

NE5510279A-T1-A

データシート

Bulk * Active - - - - - - - - - - - - - -
2SK3306(3)-AZ

2SK3306(3)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,765 -

RFQ

2SK3306(3)-AZ

データシート

Bulk * Active - - - - - - - - - - - - - -
FCP260N65S3

FCP260N65S3

MOSFET N-CH 650V 12A TO220-3

onsemi
2,127 -

RFQ

FCP260N65S3

データシート

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 1.2mA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1838STR-E

2SK1838STR-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

2SK1838STR-E

データシート

Bulk * Active - - - - - - - - - - - - - -
IPB80P04P407ATMA1

IPB80P04P407ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,608 -

RFQ

IPB80P04P407ATMA1

データシート

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1838S-E

2SK1838S-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,810 -

RFQ

2SK1838S-E

データシート

Bulk * Active - - - - - - - - - - - - - -
IPB80P04P4L06ATMA1

IPB80P04P4L06ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,657 -

RFQ

IPB80P04P4L06ATMA1

データシート

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.4mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V ±16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB70N12S311ATMA1

IPB70N12S311ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies
3,461 -

RFQ

IPB70N12S311ATMA1

データシート

Tape & Reel (TR),Bulk * Not For New Designs - - - - - - - - - - - - - -
IPD90N04S3H4ATMA1

IPD90N04S3H4ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
2,335 -

RFQ

IPD90N04S3H4ATMA1

データシート

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 4.3mOhm @ 90A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HAT2279N-EL-E

HAT2279N-EL-E

MOSFET N-CH 80V 30A 8LFPAK

Renesas Electronics America Inc
2,348 -

RFQ

HAT2279N-EL-E

データシート

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta) - 12.3mOhm @ 15A, 10V - 60 nC @ 10 V - 3520 pF @ 10 V - 25W (Tc) 150°C (TJ) Surface Mount
2SK1838L-E

2SK1838L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,333 -

RFQ

2SK1838L-E

データシート

Bulk * Active - - - - - - - - - - - - - -
SIE882DF-T1-GE3

SIE882DF-T1-GE3

MOSFET N-CH 25V 60A 10POLARPAK

Vishay Siliconix
3,291 -

RFQ

SIE882DF-T1-GE3

データシート

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.4mOhm @ 20A, 10V 2.2V @ 250µA 145 nC @ 10 V ±20V 6400 pF @ 12.5 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2907ZS-7P

AUIRF2907ZS-7P

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
1,384 -

RFQ

AUIRF2907ZS-7P

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) - 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V - 7580 pF @ 25 V - - -55°C ~ 175°C (TJ) Surface Mount
NP82N055NUG-S18-AY

NP82N055NUG-S18-AY

MOSFET N-CH 55V 82A TO262

NEC Corporation
1,100 -

RFQ

NP82N055NUG-S18-AY

データシート

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 82A (Tc) - 6mOhm @ 41A, 10V 4V @ 250µA 160 nC @ 10 V - 9600 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C (TJ) Through Hole
TK5A90E,S4X

TK5A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
3,450 -

RFQ

TK5A90E,S4X

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Ta) 10V 3.1Ohm @ 2.3A, 10V 4V @ 450µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C Through Hole
TQM033NB04CR RLG

TQM033NB04CR RLG

MOSFET N-CH 40V 21A/121A PDFN56U

Taiwan Semiconductor Corporation
4,775 -

RFQ

TQM033NB04CR RLG

データシート

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 121A (Tc) 7V, 10V 3.3mOhm @ 21A, 10V 3.8V @ 250µA 87 nC @ 10 V ±20V 4917 pF @ 20 V - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IRF351

IRF351

N-CHANNEL POWER MOSFET

Harris Corporation
1,804 -

RFQ

IRF351

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 15A (Tc) 10V 300mOhm @ 8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOI11S60

AOI11S60

MOSFET N-CH 600V 11A TO251A

Alpha & Omega Semiconductor Inc.
3,377 -

RFQ

AOI11S60

データシート

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 399mOhm @ 3.8A, 10V 4.1V @ 250µA 11 nC @ 10 V ±30V 545 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS2170N7

FDS2170N7

MOSFET N-CH 200V 3A 8SOIC

Fairchild Semiconductor
23,636 -

RFQ

FDS2170N7

データシート

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 128mOhm @ 3A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1292 pF @ 100 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP460C

IRFP460C

MOSFET N-CH 500V 20A TO3P

Fairchild Semiconductor
16,135 -

RFQ

IRFP460C

データシート

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 240mOhm @ 10A, 10V 4V @ 250µA 170 nC @ 10 V ±30V 6000 pF @ 25 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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