写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDS2070N7MOSFET N-CH 150V 4.1A 8SO Fairchild Semiconductor |
15,138 | - |
RFQ |
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Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.1A (Ta) | 6V, 10V | 78mOhm @ 4.1A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1884 pF @ 75 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPB80P03P4L07ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
2,535 | - |
RFQ |
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Tape & Reel (TR) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF1010NSTRRPBFMOSFET N-CH 55V 85A D2PAK Infineon Technologies |
2,545 | - |
RFQ |
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Tape & Reel (TR) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TPW2900ENH,L1QPB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage |
3,119 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 33A (Tc) | 10V | 29mOhm @ 16.5A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 800mW (Ta), 142W (Tc) | 150°C | Surface Mount |
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TPW5200FNH,L1QPB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage |
3,962 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 800mW (Ta), 142W (Tc) | 150°C | Surface Mount |
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TPW1500CNH,L1QPB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage |
2,450 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) | 150°C | Surface Mount |
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AOT264LMOSFET N-CH 60V 19A/140A TO220 Alpha & Omega Semiconductor Inc. |
2,364 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 19A (Ta), 140A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.2V @ 250µA | 94 nC @ 10 V | ±20V | 8400 pF @ 30 V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AOT482LMOSFET N-CH 80V 11A/105A TO220 Alpha & Omega Semiconductor Inc. |
2,473 | - |
RFQ |
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Tube | SDMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 80 V | 11A (Ta), 105A (Tc) | 7V, 10V | 7.2mOhm @ 20A, 10V | 3.7V @ 250µA | 81 nC @ 10 V | ±25V | 4870 pF @ 40 V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP033N04NF2SAKMA1TRENCH PG-TO220-3 Infineon Technologies |
3,271 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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NVMFS5C430NLWFAFT1GMOSFET N-CH 40V 38A/200A 5DFN onsemi |
2,935 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 70 nC @ 10 V | ±20V | 4300 pF @ 20 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQI7N60TUMOSFET N-CH 600V 7.4A I2PAK onsemi |
3,568 | - |
RFQ |
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Bulk,Tube,Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1430 pF @ 25 V | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDMS004N08CMOSFET N-CH 80V 126A 8PQFN onsemi |
2,865 | - |
RFQ |
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Tape & Reel (TR) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 126A (Tc) | 6V, 10V | 4mOhm @ 44A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±20V | 4250 pF @ 40 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FCPF250N65S3L1-F154POWER MOSFET, N-CHANNEL, SUPERFE onsemi |
1,995 | - |
RFQ |
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Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tj) | 10V | 250mOhm @ 6A, 10V | 4.5V @ 290µA | 24 nC @ 10 V | ±30V | 1010 pF @ 400 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF9520STRRPBFMOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix |
3,516 | - |
RFQ |
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Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TK20G60W,RVQMOSFET N CH 600V 20A D2PAK Toshiba Semiconductor and Storage |
2,989 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | Super Junction | 165W (Tc) | 150°C (TJ) | Surface Mount |
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2SJ143(04)-S6-AZP-CHANNEL POWER MOSFET Renesas Electronics America Inc |
5,024 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AOTF22N50LMOSFET N-CH 500V 22A TO220-3F Alpha & Omega Semiconductor Inc. |
2,395 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 4.5V @ 250µA | 83 nC @ 10 V | ±30V | 3710 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IAUC100N08S5N034ATMA1MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies |
3,008 | - |
RFQ |
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Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 132A (Tj) | 6V, 10V | 3.4mOhm @ 50A, 10V | 3.8V @ 78µA | 66 nC @ 10 V | ±20V | 4559 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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2SJ143-AZP-CHANNEL POWER MOSFET Renesas Electronics America Inc |
2,440 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFD6H840NLT1GT8 80V LL SO8FL DS onsemi |
3,856 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |