写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTD5C446NT4GMOSFET N-CH 40V 110A DPAK onsemi |
3,122 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 34.3 nC @ 10 V | ±20V | 2300 pF @ 20 V | - | 66W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFSL7540PBFMOSFET N-CH 60V 110A TO262 Infineon Technologies |
4,200 | - |
RFQ |
![]() データシート |
Bulk,Tube | HEXFET®, StrongIRFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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NTMFS010N10GTWG100V MVSOA IN PQFN56 PACKAGE onsemi |
2,695 | - |
RFQ |
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Tc) | 10V | 10.8mOhm @ 31A, 10V | 4V @ 164µA | 58.5 nC @ 10 V | ±20V | 3950 pF @ 50 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRLR3410TRMOSFET N-CH 100V 17A DPAK Infineon Technologies |
3,820 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVMFWS0D7N04XMT1G40V T10M IN S08FL PACKAGE onsemi |
2,107 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 331A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 3.5V @ 180µA | 74.5 nC @ 10 V | ±20V | 4657 pF @ 25 V | - | 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
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STL8NH3LLMOSFET N-CH 30V 8A POWERFLAT STMicroelectronics |
2,120 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | STripFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 15mOhm @ 4A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | ±18V | 965 pF @ 25 V | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDMC8854MOSFET N-CH 30V 15A 8MLP onsemi |
3,202 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 3V @ 250µA | 57 nC @ 10 V | ±20V | 3405 pF @ 10 V | - | 2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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TK8A45DA(STA4,Q,M)MOSFET N-CH 450V 7.5A TO220SIS Toshiba Semiconductor and Storage |
2,453 | - |
RFQ |
![]() データシート |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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TK5A60W5,S5VXPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
3,942 | - |
RFQ |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Ta) | 10V | 950mOhm @ 2.3A, 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | ±30V | 370 pF @ 300 V | - | 30W (Tc) | 150°C | Through Hole | |
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IRF6724MTRPBFMOSFET N-CH 30V 27A DIRECTFET Infineon Technologies |
2,350 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 54 nC @ 4.5 V | ±20V | 4404 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRF40DM229MOSFET N-CH 40V 159A DIRECTFET Infineon Technologies |
2,100 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 159A (Tc) | 6V, 10V | 1.85mOhm @ 97A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5317 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BUK9Y1R6-40HXBUK9Y1R6-40H/SOT669/LFPAK Nexperia USA Inc. |
3,925 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | - | Active | - | - | - | 120A (Tj) | - | - | - | - | - | - | - | - | - | - |
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IPD90N04S304ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
2,576 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 90µA | 80 nC @ 10 V | ±20V | 5200 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RJK0702DPP-E0#T2MOSFET N-CH 75V 90A TO220FP Renesas Electronics America Inc |
1,650 | - |
RFQ |
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Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Ta) | - | 4.8mOhm @ 45A, 10V | - | 89 nC @ 10 V | - | 6450 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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BTS247ZE3062ANTMA1N-CHANNEL POWER MOSFET Infineon Technologies |
137,000 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SK2114-EN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
15,737 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHB6N80E-GE3MOSFET N-CH 800V 5.4A D2PAK Vishay Siliconix |
3,103 | - |
RFQ |
![]() データシート |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDMS015N04BMOSFET N-CH 40V 31.3A/100A 8PQFN onsemi |
3,790 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 31.3A (Ta), 100A (Tc) | 10V | 1.5mOhm @ 50A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±20V | 8725 pF @ 20 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NDB6060LMOSFET N-CH 60V 48A D2PAK onsemi |
3,639 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 5V, 10V | 20mOhm @ 24A, 10V | 2V @ 250µA | 60 nC @ 5 V | ±16V | 2000 pF @ 25 V | - | 100W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount |
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2SJ652-RA11POWER MOSFET MOTOR DRIVERS Sanyo |
268 | - |
RFQ |
![]() データシート |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta) | 4V, 10V | 38mOhm @ 14A, 10V | - | 80 nC @ 10 V | ±20V | 4360 pF @ 20 V | - | - | 150°C (TJ) | Through Hole |