トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP024N08NF2SAKMA1

IPP024N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
971 -

RFQ

IPP024N08NF2SAKMA1

データシート

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 182A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 139µA 133 nC @ 10 V ±20V 6200 pF @ 40 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB22N03S4L15ATMA1

IPB22N03S4L15ATMA1

MOSFET N-CH 30V 22A TO263-3

Infineon Technologies
27,000 -

RFQ

IPB22N03S4L15ATMA1

データシート

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.6mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BTS244ZE3062AATMA1

BTS244ZE3062AATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
47,750 -

RFQ

BTS244ZE3062AATMA1

データシート

Bulk * Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V - 170W (Tc) -40°C ~ 175°C (TJ) Surface Mount
STFU18N60M2

STFU18N60M2

MOSFET N-CH 600V TO-220FP

STMicroelectronics
2,358 -

RFQ

Tube * Active - - - - - - - - - - - - - -
NTP011N15MC

NTP011N15MC

MOSFET N-CH 150V 9.8/74.3A TO220

onsemi
719 -

RFQ

NTP011N15MC

データシート

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 9.8A (Ta), 74.3A (Tc) - 10.9mOhm @ 41A, 10V 4.5V @ 223µA 37 nC @ 10 V ±20V 2810 pF @ 75 V - 2.4W (Ta), 136.4W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD9N80K5

STD9N80K5

MOSFET N-CHANNEL 800V 7A DPAK

STMicroelectronics
2,917 -

RFQ

STD9N80K5

データシート

Tape & Reel (TR) MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 900mOhm @ 3.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 340 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4456DY-T1-GE3

SI4456DY-T1-GE3

MOSFET N-CH 40V 33A 8SO

Vishay Siliconix
3,509 -

RFQ

SI4456DY-T1-GE3

データシート

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.8V @ 250µA 122 nC @ 10 V ±20V 5670 pF @ 20 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA21N80AEF-GE3

SIHA21N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
975 -

RFQ

SIHA21N80AEF-GE3

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 250mOhm @ 8.5A, 10V 4V @ 250µA 71 nC @ 10 V ±30V 1511 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB15N50E-GE3

SIHB15N50E-GE3

MOSFET N-CH 500V 14.5A D2PAK

Vishay Siliconix
2,795 -

RFQ

SIHB15N50E-GE3

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD186N60EF-GE3

SIHD186N60EF-GE3

MOSFET N-CH 600V 19A DPAK

Vishay Siliconix
6,000 -

RFQ

SIHD186N60EF-GE3

データシート

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 201mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1118 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP2540N3-G-P002

TP2540N3-G-P002

MOSFET P-CH 400V 86MA TO92-3

Microchip Technology
3,447 -

RFQ

TP2540N3-G-P002

データシート

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 400 V 86mA (Tj) 4.5V, 10V 25Ohm @ 100mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
FQPF12N60

FQPF12N60

MOSFET N-CH 600V 5.8A TO220F

Fairchild Semiconductor
55,453 -

RFQ

FQPF12N60

データシート

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.8A (Tc) 10V 700mOhm @ 2.9A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD4804NT4G

NTD4804NT4G

MOSFET N-CH 30V 14.5A/124A DPAK

onsemi
3,737 -

RFQ

NTD4804NT4G

データシート

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4mOhm @ 30A, 10V 2.5V @ 250µA 40 nC @ 4.5 V ±20V 4490 pF @ 12 V - 1.43W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP100N18N3GXKSA1

IPP100N18N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
12,850 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
TK8A50D(STA4,Q,M)

TK8A50D(STA4,Q,M)

MOSFET N-CH 500V 8A TO220SIS

Toshiba Semiconductor and Storage
2,849 -

RFQ

TK8A50D(STA4,Q,M)

データシート

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Ta) 10V 850mOhm @ 4A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
2SK1402A-E

2SK1402A-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,262 -

RFQ

2SK1402A-E

データシート

Bulk * Active - - - - - - - - - - - - - -
RJK6012DPP-00#T2

RJK6012DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,385 -

RFQ

RJK6012DPP-00#T2

データシート

Bulk * Active - - - - - - - - - - - - - -
IXTA1R4N100P

IXTA1R4N100P

MOSFET N-CH 1000V 1.4A TO263

IXYS
110 -

RFQ

IXTA1R4N100P

データシート

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 500mA, 10V 4.5V @ 50µA 17.8 nC @ 10 V ±20V 450 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK5009DPP-00#T2

RJK5009DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,936 -

RFQ

RJK5009DPP-00#T2

データシート

Bulk * Active - - - - - - - - - - - - - -
RJK0346DPA-WS#J0

RJK0346DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,899 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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