トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS5C430NLAFT3G

NVMFS5C430NLAFT3G

MOSFET N-CH 40V 38A/200A 5DFN

onsemi
3,150 -

RFQ

NVMFS5C430NLAFT3G

データシート

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS6H824NLWFT1G

NVMFS6H824NLWFT1G

MOSFET N-CH 80V 20A/110A 5DFN

onsemi
2,832 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 110A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 140µA 52 nC @ 10 V ±20V 2900 pF @ 40 V - 3.8W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT2142L

AOT2142L

MOSFET N-CHANNEL 40V 120A TO220

Alpha & Omega Semiconductor Inc.
2,709 -

RFQ

AOT2142L

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2.3V @ 250µA 100 nC @ 10 V ±20V 8320 pF @ 20 V - 312W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSJU11N65-TP

MSJU11N65-TP

MOSFET N-CH 650V 11A DPAK

Micro Commercial Co
3,051 -

RFQ

MSJU11N65-TP

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMYS1D7N04CTWG

NVMYS1D7N04CTWG

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi
3,130 -

RFQ

NVMYS1D7N04CTWG

データシート

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 210µA 50 nC @ 10 V ±20V 3125 pF @ 25 V - 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi
2,494 -

RFQ

NVMYS1D6N04CLTWG

データシート

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 3V @ 210µA 71 nC @ 10 V ±20V 4301 pF @ 25 V - 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GKI03039

GKI03039

MOSFET N-CH 30V 18A 8DFN

Sanken
2,327 -

RFQ

GKI03039

データシート

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 3.8mOhm @ 47.2A, 10V 2.5V @ 650µA 38.8 nC @ 10 V ±20V 2460 pF @ 15 V - 3.1W (Ta), 59W (Tc) 150°C (TJ) Surface Mount
IAUC100N10S5L054ATMA1

IAUC100N10S5L054ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies
3,081 -

RFQ

IAUC100N10S5L054ATMA1

データシート

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 101A (Tj) 4.5V, 10V 5.4mOhm @ 50A, 10V 2.2V @ 64µA 53 nC @ 10 V ±20V 3744 pF @ 50 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK5Q60W,S1VQ

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

Toshiba Semiconductor and Storage
3,923 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Through Hole
AOB11S60L

AOB11S60L

MOSFET N-CH 600V 11A TO263

Alpha & Omega Semiconductor Inc.
2,373 -

RFQ

AOB11S60L

データシート

Tape & Reel (TR),Cut Tape (CT) aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 399mOhm @ 3.8A, 10V 4.1V @ 250µA 11 nC @ 10 V ±30V 545 pF @ 100 V - 178W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOB266L

AOB266L

MOSFET N-CH 60V 18A/140A TO263

Alpha & Omega Semiconductor Inc.
2,096 -

RFQ

AOB266L

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 140A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.2V @ 250µA 80 nC @ 10 V ±20V 6800 pF @ 30 V - 2.1W (Ta), 268W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75639P3-F102

HUF75639P3-F102

MOSFET N-CH 100V 56A TO220-3

onsemi
3,360 -

RFQ

HUF75639P3-F102

データシート

Tube,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR2905ZTRL

AUIRLR2905ZTRL

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,511 -

RFQ

AUIRLR2905ZTRL

データシート

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V - 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6797MTRPBF

IRF6797MTRPBF

MOSFET N-CH 25V 36A DIRECTFET

Infineon Technologies
2,476 -

RFQ

IRF6797MTRPBF

データシート

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
R6511KNXC7G

R6511KNXC7G

650V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
4,000 -

RFQ

R6511KNXC7G

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Ta) 10V 400mOhm @ 3.8A, 10V 5V @ 320µA 22 nC @ 10 V ±20V 760 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
IXTP2N100P

IXTP2N100P

MOSFET N-CH 1000V 2A TO220AB

IXYS
130 -

RFQ

IXTP2N100P

データシート

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 100µA 24.3 nC @ 10 V ±20V 655 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQH18N50V2

FQH18N50V2

MOSFET N-CH 500V 20A TO247-3

Fairchild Semiconductor
4,058 -

RFQ

FQH18N50V2

データシート

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 265mOhm @ 10A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAF2001-90-E

HAF2001-90-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,267 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BFL4007

BFL4007

MOSFET N-CH 600V 14/8.7A TO220FI

Sanyo
12,559 -

RFQ

BFL4007

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Ta), 8.7A (Tc) - 680mOhm @ 7A, 10V 5V @ 1mA 46 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C Through Hole
2SK3109-Z-E1-AZ

2SK3109-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
12,400 -

RFQ

2SK3109-Z-E1-AZ

データシート

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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