トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6576KNZ4C13

R6576KNZ4C13

650V 76A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor
504 -

RFQ

R6576KNZ4C13

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 46mOhm @ 44.4A, 10V 5V @ 2.96mA 165 nC @ 10 V ±20V 7400 pF @ 25 V - 735W (Tc) 150°C (TJ) Through Hole
UF4C120053K3S

UF4C120053K3S

1200V/53MOHM, SIC, FAST CASCODE

UnitedSiC
571 -

RFQ

UF4C120053K3S

データシート

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 34A (Tc) 12V 67mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ)
IXFK32N80P

IXFK32N80P

MOSFET N-CH 800V 32A TO264AA

IXYS
150 -

RFQ

IXFK32N80P

データシート

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF4C120053K4S

UF4C120053K4S

1200V/53MOHM, SIC, FAST CASCODE

UnitedSiC
590 -

RFQ

UF4C120053K4S

データシート

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 34A (Tc) 12V 67mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ)
IXFK98N60X3

IXFK98N60X3

DISCRETE MOSFET 98A 600V X3 TO26

IXYS
300 -

RFQ

Tube * Active - - - - - - - - - - - - - -
R6070JNZ4C13

R6070JNZ4C13

600V 70A TO-247, PRESTOMOS WITH

Rohm Semiconductor
600 -

RFQ

R6070JNZ4C13

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 15V 58mOhm @ 35A, 15V 7V @ 3mA 165 nC @ 15 V ±30V 6000 pF @ 100 V - 770W (Tc) 150°C (TJ) Through Hole
IXFH90N65X3

IXFH90N65X3

MOSFET 90A 650V X3 TO247

IXYS
530 -

RFQ

IXFH90N65X3

データシート

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 90A (Tc) 10V 33mOhm @ 45A, 10V 5.2V @ 4mA 95 nC @ 10 V ±20V 6080 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
6AM13

6AM13

N-CHANNEL AND P-CHANNEL, MOSFETS

Renesas Electronics America Inc
1,673 -

RFQ

6AM13

データシート

Bulk * Active - - - - - - - - - - - - - -
VP2206N2

VP2206N2

MOSFET P-CH 60V 750MA TO39

Microchip Technology
184 -

RFQ

VP2206N2

データシート

Bag - Active P-Channel MOSFET (Metal Oxide) 60 V 750mA (Tj) 5V, 10V 900mOhm @ 3.5A, 10V 3.5V @ 10mA - ±20V 450 pF @ 25 V - 360mW (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1628-E

2SK1628-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,302 -

RFQ

2SK1628-E

データシート

Bulk * Active - - - - - - - - - - - - - -
BTS240AHKSA1

BTS240AHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
12,798 -

RFQ

BTS240AHKSA1

データシート

Bulk * Obsolete - - - - - - - - - - - - - -
FCH029N65S3-F155

FCH029N65S3-F155

MOSFET N-CH 650V 75A TO247-3

onsemi
215 -

RFQ

FCH029N65S3-F155

データシート

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) - 29mOhm @ 37.5A, 10V 4.5V @ 7mA 201 nC @ 10 V ±30V 6340 pF @ 400 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R039M1HXKSA1

IMW65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
133 -

RFQ

IMW65R039M1HXKSA1

データシート

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 18V 50mOhm @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V 1393 pF @ 400 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6576ENZ4C13

R6576ENZ4C13

650V 76A TO-247, LOW-NOISE POWER

Rohm Semiconductor
597 -

RFQ

R6576ENZ4C13

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Ta) 10V 46mOhm @ 44.4A, 10V 4V @ 2.96mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) Through Hole
IMZA65R039M1HXKSA1

IMZA65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
224 -

RFQ

IMZA65R039M1HXKSA1

データシート

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 50A (Tc) 18V 50mOhm @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V 1393 pF @ 400 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
H5N3011P80-E#T2

H5N3011P80-E#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,770 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
TW060N120C,S1F

TW060N120C,S1F

G3 1200V SIC-MOSFET TO-247 60MO

Toshiba Semiconductor and Storage
165 -

RFQ

TW060N120C,S1F

データシート

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 36A (Tc) 18V 78mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C Through Hole
TP65H035G4WSQA

TP65H035G4WSQA

650 V 46.5 GAN FET

Transphorm
170 -

RFQ

TP65H035G4WSQA

データシート

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Gallium Nitride) 650 V 47.2A (Tc) 10V 41mOhm @ 30A, 10V 4.8V @ 1mA 22 nC @ 10 V ±20V 1500 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHS90N65E-GE3

SIHS90N65E-GE3

E SERIES POWER MOSFET SUPER-247

Vishay Siliconix
508 -

RFQ

SIHS90N65E-GE3

データシート

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 87A (Tc) 10V 29mOhm @ 45A, 10V 4V @ 250µA 591 nC @ 10 V ±30V 11826 pF @ 100 V - 625W (Tc) -55°C ~ 150°C (TJ)
NTH4LN019N65S3H

NTH4LN019N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
400 -

RFQ

NTH4LN019N65S3H

データシート

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19.3mOhm @ 37.5A, 10V 4V @ 14.3mA 282 nC @ 10 V ±30V 15993 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
日文版

ホーム

日文版

製品

日文版

電話

日文版

ユーザー