トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB80P03P405ATMA1

IPB80P03P405ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies
3,527 -

RFQ

IPB80P03P405ATMA1

データシート

Tape & Reel (TR) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P03P4L04ATMA1

IPB80P03P4L04ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies
2,441 -

RFQ

IPB80P03P4L04ATMA1

データシート

Tape & Reel (TR) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZXMN2069FTA

ZXMN2069FTA

MOSFET N-CH SOT23-3

Diodes Incorporated
3,000 -

RFQ

ZXMN2069FTA

データシート

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) - 1.4A (Ta) - - - - - - - - - Surface Mount
STF12N50M2

STF12N50M2

MOSFET N-CH 500V 10A TO220FP

STMicroelectronics
2,734 -

RFQ

STF12N50M2

データシート

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 380mOhm @ 5A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 560 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSD314SPEH6327XTSA1

BSD314SPEH6327XTSA1

MOSFET P-CH 30V 1.5A SOT363-6

Infineon Technologies
14,814 -

RFQ

BSD314SPEH6327XTSA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4.5V, 10V 140mOhm @ 1.5A, 10V 2V @ 6.3µA 2.9 nC @ 10 V ±20V 294 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXTA32P05T-TRL

IXTA32P05T-TRL

MOSFET P-CH 50V 32A TO263

IXYS
3,620 -

RFQ

Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 32A (Tc) 10V 39mOhm @ 16A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 1975 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK964R2-55B,118

BUK964R2-55B,118

MOSFET N-CH 55V 75A D2PAK

Nexperia USA Inc.
2,780 -

RFQ

BUK964R2-55B,118

データシート

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 3.7mOhm @ 25A, 10V 2V @ 1mA 95 nC @ 5 V ±15V 10220 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6726MTRPBF

IRF6726MTRPBF

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
2,480 -

RFQ

IRF6726MTRPBF

データシート

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V 2.35V @ 150µA 77 nC @ 4.5 V ±20V 6140 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7780MTRPBF

IRF7780MTRPBF

MOSFET N-CH 75V 89A DIRECTFET

Infineon Technologies
3,041 -

RFQ

IRF7780MTRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 89A (Tc) 6V, 10V 5.7mOhm @ 53A, 10V 3.7V @ 150µA 186 nC @ 10 V ±20V 6504 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL3206PBF

IRFSL3206PBF

MOSFET N-CH 60V 120A TO262

Infineon Technologies
2,864 -

RFQ

IRFSL3206PBF

データシート

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA110N055T2-TRL

IXTA110N055T2-TRL

MOSFET N-CH 55V 110A TO263

IXYS
3,198 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 6.6mOhm @ 25A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3060 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ48N

AUIRFZ48N

MOSFET N-CH 55V 69A TO220AB

Infineon Technologies
3,398 -

RFQ

AUIRFZ48N

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 69A (Tc) 10V 14mOhm @ 40A, 10V 4V @ 100µA 63 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR8405TRL

AUIRFR8405TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies
879 -

RFQ

AUIRFR8405TRL

データシート

Tape & Reel (TR),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
VP0550N3-G-P013

VP0550N3-G-P013

MOSFET P-CH 500V 54MA TO92-3

Microchip Technology
3,397 -

RFQ

VP0550N3-G-P013

データシート

Tape & Box (TB) - Active P-Channel MOSFET (Metal Oxide) 500 V 54mA (Tj) 5V, 10V 125Ohm @ 10mA, 10V 4.5V @ 1mA - ±20V 70 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK764R2-80E,118

BUK764R2-80E,118

MOSFET N-CH 80V 120A D2PAK

Nexperia USA Inc.
2,788 -

RFQ

BUK764R2-80E,118

データシート

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.2mOhm @ 25A, 10V 4V @ 1mA 136 nC @ 10 V ±20V 10426 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTR4501NST1G

NTR4501NST1G

MOSFET N-CH 20V 3.2A SOT23

onsemi
24,520 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete - - - 3.2A (Ta) - - - - - - - - - Surface Mount
NVMFWS2D3P04M8LT1G

NVMFWS2D3P04M8LT1G

MV8 P INITIAL PROGRAM

onsemi
3,751 -

RFQ

NVMFWS2D3P04M8LT1G

データシート

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 222A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.4V @ 2.7mA 157 nC @ 10 V ±20V 5985 pF @ 20 V - 3.8W (Ta), 205W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ES6U1T2R

ES6U1T2R

MOSFET P-CH 12V 1.3A 6WEMT

Rohm Semiconductor
8,330 -

RFQ

ES6U1T2R

データシート

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.3A (Ta) 1.5V, 4.5V 260mOhm @ 1.3A, 4.5V 1V @ 1mA 2.4 nC @ 4.5 V ±10V 290 pF @ 6 V Schottky Diode (Isolated) 700mW (Ta) 150°C (TJ) Surface Mount
C2M0160120D

C2M0160120D

SICFET N-CH 1200V 19A TO247-3

Wolfspeed, Inc.
500 -

RFQ

C2M0160120D

データシート

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 20V 196mOhm @ 10A, 20V 2.5V @ 500µA 32.6 nC @ 20 V +25V, -10V 527 pF @ 800 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TW083N65C,S1F

TW083N65C,S1F

G3 650V SIC-MOSFET TO-247 83MOH

Toshiba Semiconductor and Storage
175 -

RFQ

TW083N65C,S1F

データシート

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 30A (Tc) 18V 113mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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