写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQPF33N10LPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
15,230 | - |
RFQ |
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Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 5V, 10V | 52mOhm @ 9A, 10V | 2V @ 250µA | 40 nC @ 5 V | ±20V | 1630 pF @ 25 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPU80R750P7AKMA1IPU80R750 - 800V COOLMOS N-CHANN Infineon Technologies |
14,025 | - |
RFQ |
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Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IAUC60N04S6L039ATMA1IAUC60N04S6L039ATMA1 Infineon Technologies |
4,256 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 4.02mOhm @ 30A, 10V | 2V @ 14µA | 20 nC @ 10 V | ±16V | 1179 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFH8324TRPBFMOSFET N-CH 30V 23A/90A PQFN Infineon Technologies |
2,238 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 20A, 10V | 2.35V @ 50µA | 31 nC @ 10 V | ±20V | 2380 pF @ 10 V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD14N06S280ATMA2MOSFET N-CH 55V 17A TO252-31 Infineon Technologies |
2,460 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10 nC @ 10 V | ±20V | 293 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPD60R1K5PFD7SAUMA1MOSFET N-CH 650V 3.6A TO252 Infineon Technologies |
1,615 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.6A (Tc) | 10V | 1.5Ohm @ 700mA, 10V | 4.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 169 pF @ 400 V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
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FCU2250N80ZMOSFET N-CH 800V 2.6A I-PAK Fairchild Semiconductor |
96,353 | - |
RFQ |
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Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | ±20V | 585 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDC697P8A, 20V, 0.02OHM, P-CHANNEL MOSF Fairchild Semiconductor |
69,806 | - |
RFQ |
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Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Ta) | 1.8V, 4.5V | 20mOhm @ 8A, 4.5V | 1.5V @ 250µA | 55 nC @ 4.5 V | ±8V | 3524 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPP70N04S406AKSA1MOSFET_(20V,40V) Infineon Technologies |
11,900 | - |
RFQ |
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32 nC @ 10 V | ±20V | 2550 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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PJD50N10AL-AU_L2_000A1100V N-CHANNEL ENHANCEMENT MODE Panjit International Inc. |
1,968 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.3A (Ta), 42A (Tc) | 4.5V, 10V | 25mOhm @ 20A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1485 pF @ 30 V | - | 2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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ISZ0501NLSATMA125V, N-CH MOSFET, LOGIC LEVEL, P Infineon Technologies |
4,974 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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BSP296NH6327XTSA1MOSFET N-CH 100V 1.2A SOT223-4 Infineon Technologies |
1,407 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7 nC @ 10 V | ±20V | 152.7 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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APT24M120B2MOSFET N-CH 1200V 24A T-MAX Microchip Technology |
2,641 | - |
RFQ |
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Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 10V | 630mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT29F100LMOSFET N-CH 1000V 30A TO264 Microchip Technology |
3,000 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 460mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STY140NS10MOSFET N-CH 100V 140A MAX247 STMicroelectronics |
3,238 | - |
RFQ |
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Tube | MESH OVERLAY™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 4V @ 250µA | 600 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STW75N60M6-4MOSFET N-CH 600V 72A TO247-4 STMicroelectronics |
3,895 | - |
RFQ |
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Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4850 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT20M34SLLG/TRMOSFET N-CH 200V 74A D3PAK Microchip Technology |
2,476 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 74A (Tc) | 10V | 34mOhm @ 37A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 3660 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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APT5015SVFRGMOSFET N-CH 500V 32A D3PAK Microchip Technology |
2,695 | - |
RFQ |
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Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | 10V | 150mOhm @ 16A, 10V | 4V @ 1mA | 300 nC @ 10 V | ±30V | 5280 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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APT8065SVRGMOSFET N-CH 800V 13A D3PAK Microchip Technology |
2,046 | - |
RFQ |
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Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | Surface Mount |
|
APT6029SLLGMOSFET N-CH 600V 21A D3PAK Microchip Technology |
2,147 | - |
RFQ |
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Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2615 pF @ 25 V | - | - | - | Surface Mount |