トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NDS8425

NDS8425

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
4,704 -

RFQ

NDS8425

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 7.4A (Ta) 2.7V, 4.5V 22mOhm @ 7.4A, 4.5V 1.5V @ 250µA 18 nC @ 4.5 V ±8V 1098 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR120NTRLPBF

IRLR120NTRLPBF

MOSFET N-CH 100V 10A DPAK

Infineon Technologies
2,168 -

RFQ

IRLR120NTRLPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI45N06S4-09AKSA2

IPI45N06S4-09AKSA2

IPI45N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
97,500 -

RFQ

IPI45N06S4-09AKSA2

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 9.4mOhm @ 45A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ358C-T1-AZ

2SJ358C-T1-AZ

2SJ358C-T1-AZ - P-CHANNEL MOS FE

Renesas
15,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Ta) 4V, 10V 143mOhm @ 2A, 10V 2.5V @ 1mA 12 nC @ 10 V ±20V 666 pF @ 10 V - 2W (Ta) 150°C Surface Mount
2SK2054-T1-AZ

2SK2054-T1-AZ

2SK2054 - SWITCHING P-CHANNEL PO

Renesas
14,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4V, 10V 200mOhm @ 1.5A, 10V 2V @ 1mA - ±20V 530 pF @ 10 V - 2W (Ta) 150°C Surface Mount
GT095N10D5

GT095N10D5

N100V,RD(MAX)<11M@10V,RD(MAX)<15

Goford Semiconductor
4,908 -

RFQ

GT095N10D5

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 11mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF5N50NZF

FDPF5N50NZF

MOSFET N-CH 500V 4.2A TO220F

Fairchild Semiconductor
552,134 -

RFQ

FDPF5N50NZF

データシート

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 4.2A (Tc) 10V 1.75Ohm @ 2.1A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI5N60CTU

FQI5N60CTU

MOSFET N-CH 600V 4.5A I2PAK

Fairchild Semiconductor
35,688 -

RFQ

FQI5N60CTU

データシート

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24NSTRLPBF

IRF9Z24NSTRLPBF

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
1,540 -

RFQ

IRF9Z24NSTRLPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR5505TRL

AUIRFR5505TRL

MOSFET P-CH 55V 18A DPAK

International Rectifier
2,081 -

RFQ

AUIRFR5505TRL

データシート

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN035-150B,118

PSMN035-150B,118

NEXPERIA PSMN035-150B - 50A, 150

NXP Semiconductors
6,941 -

RFQ

PSMN035-150B,118

データシート

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 10V 35mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 4720 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R650CEAUMA1

IPD65R650CEAUMA1

MOSFET N-CH 650V 7A TO252-3

Infineon Technologies
2,499 -

RFQ

IPD65R650CEAUMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPTG044N15NM5ATMA1

IPTG044N15NM5ATMA1

TRENCH >=100V

Infineon Technologies
3,214 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R163M1HXUMA1

IMT65R163M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies
3,032 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BS108,126

BS108,126

MOSFET N-CH 200V 300MA TO92-3

NXP USA Inc.
3,520 -

RFQ

BS108,126

データシート

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 300mA (Ta) 2.8V 5Ohm @ 100mA, 2.8V 1.8V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BS108/01,126

BS108/01,126

MOSFET N-CH 200V 300MA TO92-3

NXP USA Inc.
2,501 -

RFQ

BS108/01,126

データシート

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 300mA (Ta) 2.8V 5Ohm @ 100mA, 2.8V 1.8V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSN254,126

BSN254,126

MOSFET N-CH 250V 310MA TO92-3

NXP USA Inc.
3,947 -

RFQ

BSN254,126

データシート

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 310mA (Ta) 2.4V, 10V 5Ohm @ 300mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSN254A,126

BSN254A,126

MOSFET N-CH 250V 310MA TO92-3

NXP USA Inc.
2,231 -

RFQ

BSN254A,126

データシート

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 310mA (Ta) 2.4V, 10V 5Ohm @ 300mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSN304,126

BSN304,126

MOSFET N-CH 300V 300MA TO92-3

NXP USA Inc.
3,315 -

RFQ

BSN304,126

データシート

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 300mA (Ta) 2.4V, 10V 6Ohm @ 250mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSP254A,126

BSP254A,126

MOSFET P-CH 250V 200MA TO92-3

NXP USA Inc.
3,882 -

RFQ

BSP254A,126

データシート

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 200mA (Ta) 10V 15Ohm @ 200mA, 10V 2.8V @ 1mA - ±20V 90 pF @ 25 V - 1W (Ta) 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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