トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLL024ZPBF

IRLL024ZPBF

MOSFET N-CH 55V 5A SOT223

International Rectifier
3,001 -

RFQ

IRLL024ZPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 5A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 11 nC @ 5 V ±16V 380 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJB200G06B

YJB200G06B

N-CH MOSFET 60V 200A TO-263

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,923 -

RFQ

YJB200G06B

データシート

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - Surface Mount
DI035N10PT-AQ

DI035N10PT-AQ

MOSFET, 100V, 35A, 25W

Diotec Semiconductor
3,612 -

RFQ

DI035N10PT-AQ

データシート

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 18mOhm @ 7A, 10V 2.5V @ 250µA 22 nC @ 10 V ±20V 1220 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI035N10PT

DI035N10PT

MOSFET, 100V, 35A, N, 25W

Diotec Semiconductor
3,290 -

RFQ

DI035N10PT

データシート

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 18mOhm @ 7A, 10V 2.5V @ 250µA 22 nC @ 10 V ±20V 1220 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLS3813PBF

IRLS3813PBF

MOSFET N-CH 30V 160A D2PAK

International Rectifier
3,614 -

RFQ

IRLS3813PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 1.95mOhm @ 148A, 10V 2.35V @ 150µA 83 nC @ 4.5 V ±20V 8020 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC638P

FDC638P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,201 -

RFQ

FDC638P

データシート

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 48mOhm @ 4.5A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 1160 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB108N15N3G

IPB108N15N3G

IPB108N15 - 12V-300V N-CHANNEL P

Infineon Technologies
2,163 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRF1405ZSTRL

AUIRF1405ZSTRL

MOSFET N-CH 55V 150A D2PAK

International Rectifier
2,212 -

RFQ

AUIRF1405ZSTRL

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 150A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI7N80TU

FQI7N80TU

MOSFET N-CH 800V 6.6A I2PAK

Fairchild Semiconductor
2,569 -

RFQ

FQI7N80TU

データシート

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R160C6

IPW60R160C6

23.8A, 600V, 0.16OHM, N-CHANNEL

Infineon Technologies
2,211 -

RFQ

IPW60R160C6

データシート

Bulk * Active - - - - - - - - - - - - - -
FDMS3662

FDMS3662

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,349 -

RFQ

FDMS3662

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8.9A (Ta), 39A (Tc) 10V 14.8mOhm @ 8.9A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 4620 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB13AN06A0

FDB13AN06A0

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,111 -

RFQ

FDB13AN06A0

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3713PBF

IRL3713PBF

MOSFET N-CH 30V 260A TO220AB

International Rectifier
2,510 -

RFQ

IRL3713PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD5N50NZFTM

FDD5N50NZFTM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,214 -

RFQ

FDD5N50NZFTM

データシート

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 3.7A (Tc) 10V 1.75Ohm @ 1.85A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76407D3ST

HUF76407D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET P

Fairchild Semiconductor
3,540 -

RFQ

HUF76407D3ST

データシート

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP000687556

SP000687556

IPP60R099C6XKSA1 - COOLMOS N-CHA

Infineon Technologies
3,057 -

RFQ

SP000687556

データシート

Bulk * Active - - - - - - - - - - - - - -
IRF7424TRPBF

IRF7424TRPBF

IRF7424 - 20V-250V P-CHANNEL POW

International Rectifier
2,667 -

RFQ

IRF7424TRPBF

データシート

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP50R199CP

IPP50R199CP

IPP50R199 - 500V COOLMOS N-CHANN

Infineon Technologies
2,163 -

RFQ

IPP50R199CP

データシート

Bulk * Active - - - - - - - - - - - - - -
FDH210N08

FDH210N08

MOSFET N-CH 75V TO247-3

Fairchild Semiconductor
2,814 -

RFQ

FDH210N08

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V - 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R380C6

IPP65R380C6

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
3,581 -

RFQ

IPP65R380C6

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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