トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR8401

AUIRFR8401

MOSFET N-CH 40V 100A DPAK

International Rectifier
3,751 -

RFQ

AUIRFR8401

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP000850810

SP000850810

IPP50R280CEXKSA1 - 500V COOLMOS

Infineon Technologies
3,479 -

RFQ

SP000850810

データシート

Bulk * Active - - - - - - - - - - - - - -
IRFR3411TRPBF

IRFR3411TRPBF

IRFR3411 - 12V-300V N-CHANNEL PO

International Rectifier
2,142 -

RFQ

IRFR3411TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR7746TRPBF

IRFR7746TRPBF

IRFR7746 - 12V-300V N-CHANNEL PO

International Rectifier
2,276 -

RFQ

IRFR7746TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB18P06PG

SPB18P06PG

SPB18P06 - 20V-250V P-CHANNEL PO

Infineon Technologies
2,952 -

RFQ

SPB18P06PG

データシート

Bulk * Active - - - - - - - - - - - - - -
FDMS6673BZ

FDMS6673BZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,931 -

RFQ

FDMS6673BZ

データシート

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 15.2A (Ta), 28A (Tc) 4.5V, 10V 6.8mOhm @ 15.2A, 10V 3V @ 250µA 130 nC @ 10 V ±25V 5915 pF @ 15 V - 2.5W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL3206PBF

IRFSL3206PBF

MOSFET N-CH 60V 120A TO262

International Rectifier
2,800 -

RFQ

IRFSL3206PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMC6683

FDMC6683

14A, 20V, 0.0084OHM, P-CHANNEL P

Fairchild Semiconductor
2,208 -

RFQ

FDMC6683

データシート

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta), 18A (Tc) 1.8V, 5V 8.3mOhm @ 12A, 4.5V 1V @ 250µA 114 nC @ 4.5 V ±8V 7835 pF @ 10 V - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB19N20LTM

FQB19N20LTM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,641 -

RFQ

FQB19N20LTM

データシート

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 5V, 10V 140mOhm @ 10.5A, 10V 2V @ 250µA 35 nC @ 5 V ±20V 2200 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2610

FDMC2610

N-CHANNEL ULTRAFET TRENCH MOSFET

Fairchild Semiconductor
2,580 -

RFQ

FDMC2610

データシート

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 2.2A (Ta), 9.5A (Tc) 6V, 10V 200mOhm @ 2.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 960 pF @ 100 V - 2.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF40H210

IRF40H210

MOSFET N-CH 40V 100A 8PQFN

International Rectifier
2,975 -

RFQ

IRF40H210

データシート

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.7V @ 150µA 152 nC @ 10 V ±20V 5406 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2523P

FDMC2523P

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,137 -

RFQ

FDMC2523P

データシート

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 150 V 3A (Tc) 10V 1.5Ohm @ 1.5A, 10V 5V @ 250µA 9 nC @ 10 V ±30V 270 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8259TRPBF

IRLR8259TRPBF

IRLR8259 - 12V-300V N-CHANNEL PO

International Rectifier
2,759 -

RFQ

IRLR8259TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 57A (Tc) 4.5V, 10V 8.7mOhm @ 21A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 900 pF @ 13 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R125CP

IPA60R125CP

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
2,386 -

RFQ

IPA60R125CP

データシート

Bulk * Active - - - - - - - - - - - - - -
IPA65R280C6

IPA65R280C6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies
3,650 -

RFQ

IPA65R280C6

データシート

Bulk * Active - - - - - - - - - - - - - -
IRLR2703PBF

IRLR2703PBF

MOSFET N-CH 30V 23A DPAK

International Rectifier
3,094 -

RFQ

IRLR2703PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Tc) 4V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80R1K4P7

IPP80R1K4P7

IPP80R1K4 - 800V COOLMOS N-CHANN

Infineon Technologies
2,517 -

RFQ

IPP80R1K4P7

データシート

Bulk * Active - - - - - - - - - - - - - -
IRLR8256TRPBF

IRLR8256TRPBF

IRLR8256 - 12V-300V N-CHANNEL PO

International Rectifier
3,307 -

RFQ

IRLR8256TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 81A (Tc) 4.5V, 10V 5.7mOhm @ 25A, 10V 2.35V @ 25µA 15 nC @ 4.5 V ±20V 1470 pF @ 13 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS3036PBF

IRLS3036PBF

MOSFET N-CH 60V 195A D2PAK

International Rectifier
2,981 -

RFQ

IRLS3036PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN009-100P,127

PSMN009-100P,127

NOW NEXPERIA PSMN009-100P - 75A

Nexperia USA Inc.
2,984 -

RFQ

PSMN009-100P,127

データシート

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 156 nC @ 10 V ±20V 8250 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ)
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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