写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF630NPBFMOSFET N-CH 200V 9.3A TO220AB Infineon Technologies |
12,714 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 575 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRFU220NPBFMOSFET N-CH 200V 5A IPAK Infineon Technologies |
6,792 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
BSO301SPHXUMA1MOSFET P-CH 30V 12.6A 8DSO Infineon Technologies |
1,132 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 12.6A (Ta) | 4.5V, 10V | 8mOhm @ 14.9A, 10V | 2V @ 250µA | 136 nC @ 10 V | ±20V | 5890 pF @ 25 V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IRFH5215TRPBFMOSFET N-CH 150V 5A/27A PQFN Infineon Technologies |
6,232 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 27A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±20V | 1350 pF @ 50 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IRF6668TRPBFMOSFET N-CH 80V 55A DIRECTFET MZ Infineon Technologies |
31,000 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31 nC @ 10 V | ±20V | 1320 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
![]() |
IRF1010ESTRLPBFMOSFET N-CH 60V 84A D2PAK Infineon Technologies |
2,886 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IRFZ44ZPBFMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
3,236 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
AUIRLR120NTRLMOSFET N-CH 100V 10A DPAK Infineon Technologies |
7,601 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IRF520NPBFMOSFET N-CH 100V 9.7A TO220AB Infineon Technologies |
3,947 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRLU3410PBFMOSFET N-CH 100V 17A IPAK Infineon Technologies |
10,589 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRFU5305PBFMOSFET P-CH 55V 31A IPAK Infineon Technologies |
7,950 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPC022N03L3X1SA1MOSFET N-CH 30V 1A SAWN ON FOIL Infineon Technologies |
2,883 | - |
RFQ |
![]() データシート |
Bulk | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 30 V | 1A (Tj) | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount |
![]() |
IPC302N20NFDX1SA1MOSFET N-CH 200V 1A SAWN ON FOIL Infineon Technologies |
2,432 | - |
RFQ |
![]() データシート |
Bulk | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 200 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | Surface Mount |
![]() |
IPC50R045CPX1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,512 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPC60R075CPX1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,261 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPC60R099C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,772 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPC60R099CPX1SA2MOSFET N-CH BARE DIE Infineon Technologies |
3,078 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPC60R160C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,074 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPC60R190E6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,134 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPC60R280E6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,447 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |