写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF1010NSTRLPBFMOSFET N-CH 55V 85A D2PAK Infineon Technologies |
8,080 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SPD08N50C3ATMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
1,941 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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ISC012N04NM6ATMA1TRENCH <= 40V PG-TDSON-8 Infineon Technologies |
8,387 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 36A (Ta), 232A (Tc) | 6V, 10V | 1.2mOhm @ 50A, 10V | 2.8V @ 747µA | 64 nC @ 10 V | ±20V | 4600 pF @ 20 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFB3806PBFMOSFET N-CH 60V 43A TO220AB Infineon Technologies |
1,890 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFIZ24NPBFMOSFET N-CH 55V 14A TO220AB FP Infineon Technologies |
8,601 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 14A (Tc) | 10V | 70mOhm @ 7.8A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 370 pF @ 25 V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BSC0805LSATMA1MOSFET N-CH 100V 79A TDSON-8-6 Infineon Technologies |
4,062 | - |
RFQ |
![]() データシート |
Cut Tape (CT) | OptiMOS™ 5 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 79A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.3V @ 49µA | 20 nC @ 4.5 V | ±20V | 2700 pF @ 50 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSZ010NE2LS5ATMA1MOSFET N-CH 25V 32A/40A TSDSON Infineon Technologies |
6,836 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2V @ 250µA | 29 nC @ 4.5 V | ±16V | 3900 pF @ 12 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFB7546PBFMOSFET N-CH 60V 75A TO220AB Infineon Technologies |
5,222 | - |
RFQ |
![]() データシート |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 6V, 10V | 7.3mOhm @ 45A, 10V | 3.7V @ 100µA | 87 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFS7437TRLPBFMOSFET N CH 40V 195A D2PAK Infineon Technologies |
7,201 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPC60R2K0C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,834 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R380E6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,830 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R385CPX1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,649 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R3K3C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,752 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R520E6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,816 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R600E6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,822 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R950C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,661 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC65R037C6X1SA2MOSFET N-CH BARE DIE Infineon Technologies |
3,842 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC65R070C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,225 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC90R120C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,601 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC90R1K0C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,329 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |