写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF1010EPBFMOSFET N-CH 60V 84A TO220AB Infineon Technologies |
7,574 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB7446PBFMOSFET N-CH 40V 120A TO220AB Infineon Technologies |
4,904 | - |
RFQ |
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Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BSC037N08NS5ATMA1MOSFET N-CH 80V 100A TDSON Infineon Technologies |
11,623 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.7mOhm @ 50A, 10V | 3.8V @ 72µA | 58 nC @ 10 V | ±20V | 4200 pF @ 40 V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD65R225C7ATMA1MOSFET N-CH 650V 11A TO252-3 Infineon Technologies |
15,936 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF1010NPBFMOSFET N-CH 55V 85A TO220AB Infineon Technologies |
7,762 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF6717MTRPBFMOSFET N-CH 25V 38A DIRECTFET Infineon Technologies |
30,188 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.25mOhm @ 38A, 10V | 2.35V @ 150µA | 69 nC @ 4.5 V | ±20V | 6750 pF @ 13 V | - | 2.8W (Ta), 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRFZ44NLPBFMOSFET N-CH 55V 49A TO262 Infineon Technologies |
9,590 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF1405STRLPBFMOSFET N-CH 55V 131A D2PAK Infineon Technologies |
600 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF3710PBFMOSFET N-CH 100V 57A TO220AB Infineon Technologies |
1,359 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF2807PBFMOSFET N-CH 75V 82A TO220AB Infineon Technologies |
5,621 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3820 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB7440PBFMOSFET N-CH 40V 120A TO220AB Infineon Technologies |
1,306 | - |
RFQ |
![]() データシート |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135 nC @ 10 V | ±20V | 4730 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRLU3110ZPBFMOSFET N-CH 100V 42A IPAK Infineon Technologies |
5,165 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | ±16V | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFI1310NPBFMOSFET N-CH 100V 24A TO220AB FP Infineon Technologies |
1,228 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V | 36mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFU4615PBFMOSFET N-CH 150V 33A IPAK Infineon Technologies |
1,344 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP147N12N3GXKSA1MOSFET N-CH 120V 56A TO220-3 Infineon Technologies |
11,678 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 14.7mOhm @ 56A, 10V | 4V @ 61µA | 49 nC @ 10 V | ±20V | 3220 pF @ 60 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB4615PBFMOSFET N-CH 150V 35A TO220AB Infineon Technologies |
5,930 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 10V | 39mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF1404PBFMOSFET N-CH 40V 202A TO220AB Infineon Technologies |
2,419 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 202A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB65R095C7ATMA2MOSFET N-CH 650V 24A TO263-3 Infineon Technologies |
2,001 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFB4019PBFMOSFET N-CH 150V 17A TO220AB Infineon Technologies |
2,346 | - |
RFQ |
![]() データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 17A (Tc) | 10V | 95mOhm @ 10A, 10V | 4.9V @ 50µA | 20 nC @ 10 V | ±20V | 800 pF @ 50 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRL3803PBFMOSFET N-CH 30V 140A TO220AB Infineon Technologies |
3,026 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |