トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010EPBF

IRF1010EPBF

MOSFET N-CH 60V 84A TO220AB

Infineon Technologies
7,574 -

RFQ

IRF1010EPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7446PBF

IRFB7446PBF

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies
4,904 -

RFQ

IRFB7446PBF

データシート

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC037N08NS5ATMA1

BSC037N08NS5ATMA1

MOSFET N-CH 80V 100A TDSON

Infineon Technologies
11,623 -

RFQ

BSC037N08NS5ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.7mOhm @ 50A, 10V 3.8V @ 72µA 58 nC @ 10 V ±20V 4200 pF @ 40 V - 2.5W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R225C7ATMA1

IPD65R225C7ATMA1

MOSFET N-CH 650V 11A TO252-3

Infineon Technologies
15,936 -

RFQ

IPD65R225C7ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1010NPBF

IRF1010NPBF

MOSFET N-CH 55V 85A TO220AB

Infineon Technologies
7,762 -

RFQ

IRF1010NPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6717MTRPBF

IRF6717MTRPBF

MOSFET N-CH 25V 38A DIRECTFET

Infineon Technologies
30,188 -

RFQ

IRF6717MTRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.25mOhm @ 38A, 10V 2.35V @ 150µA 69 nC @ 4.5 V ±20V 6750 pF @ 13 V - 2.8W (Ta), 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFZ44NLPBF

IRFZ44NLPBF

MOSFET N-CH 55V 49A TO262

Infineon Technologies
9,590 -

RFQ

IRFZ44NLPBF

データシート

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405STRLPBF

IRF1405STRLPBF

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
600 -

RFQ

IRF1405STRLPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710PBF

IRF3710PBF

MOSFET N-CH 100V 57A TO220AB

Infineon Technologies
1,359 -

RFQ

IRF3710PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807PBF

IRF2807PBF

MOSFET N-CH 75V 82A TO220AB

Infineon Technologies
5,621 -

RFQ

IRF2807PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7440PBF

IRFB7440PBF

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies
1,306 -

RFQ

IRFB7440PBF

データシート

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 135 nC @ 10 V ±20V 4730 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3110ZPBF

IRLU3110ZPBF

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
5,165 -

RFQ

IRLU3110ZPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1310NPBF

IRFI1310NPBF

MOSFET N-CH 100V 24A TO220AB FP

Infineon Technologies
1,228 -

RFQ

IRFI1310NPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 36mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1900 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4615PBF

IRFU4615PBF

MOSFET N-CH 150V 33A IPAK

Infineon Technologies
1,344 -

RFQ

IRFU4615PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP147N12N3GXKSA1

IPP147N12N3GXKSA1

MOSFET N-CH 120V 56A TO220-3

Infineon Technologies
11,678 -

RFQ

IPP147N12N3GXKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.7mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4615PBF

IRFB4615PBF

MOSFET N-CH 150V 35A TO220AB

Infineon Technologies
5,930 -

RFQ

IRFB4615PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1404PBF

IRF1404PBF

MOSFET N-CH 40V 202A TO220AB

Infineon Technologies
2,419 -

RFQ

IRF1404PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 202A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R095C7ATMA2

IPB65R095C7ATMA2

MOSFET N-CH 650V 24A TO263-3

Infineon Technologies
2,001 -

RFQ

IPB65R095C7ATMA2

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4019PBF

IRFB4019PBF

MOSFET N-CH 150V 17A TO220AB

Infineon Technologies
2,346 -

RFQ

IRFB4019PBF

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 17A (Tc) 10V 95mOhm @ 10A, 10V 4.9V @ 50µA 20 nC @ 10 V ±20V 800 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3803PBF

IRL3803PBF

MOSFET N-CH 30V 140A TO220AB

Infineon Technologies
3,026 -

RFQ

IRL3803PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 307308309310311312313314...420Next»
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
日文版

ホーム

日文版

製品

日文版

電話

日文版

ユーザー