トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB3306PBF

IRFB3306PBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
11,574 -

RFQ

IRFB3306PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1

MOSFET N-CH 75V 100A TDSON

Infineon Technologies
8,209 -

RFQ

BSC036NE7NS3GATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 3.6mOhm @ 50A, 10V 3.8V @ 110µA 63.4 nC @ 10 V ±20V 4400 pF @ 37.5 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP150MPBF

IRFP150MPBF

MOSFET N-CH 100V 42A TO247AC

Infineon Technologies
1,262 -

RFQ

IRFP150MPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 23A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP12CN10LGXKSA1

IPP12CN10LGXKSA1

MOSFET N-CH 100V 69A TO220-3

Infineon Technologies
1,260 -

RFQ

IPP12CN10LGXKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 4.5V, 10V 12mOhm @ 69A, 10V 2.4V @ 83µA 58 nC @ 10 V ±20V 5600 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP9140NPBF

IRFP9140NPBF

MOSFET P-CH 100V 23A TO247AC

Infineon Technologies
3,776 -

RFQ

IRFP9140NPBF

データシート

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS60R3K4CEAKMA1

IPS60R3K4CEAKMA1

CONSUMER

Infineon Technologies
2,837 -

RFQ

IPS60R3K4CEAKMA1

データシート

Bulk,Tube * Not For New Designs - - - - - - - - - - - - - -
IPD090N03LGBTMA1

IPD090N03LGBTMA1

MOSFET N-CH 30V 40A TO252-3

Infineon Technologies
3,995 -

RFQ

IPD090N03LGBTMA1

データシート

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB031N08N5ATMA1

IPB031N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

Infineon Technologies
7,795 -

RFQ

IPB031N08N5ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.1mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7734PBF

IRFB7734PBF

MOSFET N-CH 75V 183A TO220AB

Infineon Technologies
9,901 -

RFQ

IRFB7734PBF

データシート

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4905LPBF

IRF4905LPBF

MOSFET P-CH 55V 42A TO262

Infineon Technologies
8,601 -

RFQ

IRF4905LPBF

データシート

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI4410ZPBF

IRFI4410ZPBF

MOSFET N-CH 100V 43A TO220AB FP

Infineon Technologies
2,297 -

RFQ

IRFI4410ZPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 10V 9.3mOhm @ 26A, 10V 4V @ 150µA 110 nC @ 10 V ±30V 4910 pF @ 50 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1324PBF

IRF1324PBF

MOSFET N-CH 24V 195A TO220AB

Infineon Technologies
4,505 -

RFQ

IRF1324PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.5mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF135B203

IRF135B203

MOSFET N-CH 135V 129A TO220-3

Infineon Technologies
1,991 -

RFQ

IRF135B203

データシート

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 135 V 129A (Tc) 10V 8.4mOhm @ 77A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 9700 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZPBF

IRF1405ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,685 -

RFQ

IRF1405ZPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB260NPBF

IRFB260NPBF

MOSFET N-CH 200V 56A TO220AB

Infineon Technologies
934 -

RFQ

IRFB260NPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) 10V 40mOhm @ 34A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4220 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R180P7XKSA1

IPP60R180P7XKSA1

MOSFET N-CH 650V 18A TO220-3

Infineon Technologies
2,000 -

RFQ

IPP60R180P7XKSA1

データシート

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP064NPBF

IRFP064NPBF

MOSFET N-CH 55V 110A TO247AC

Infineon Technologies
7,733 -

RFQ

IRFP064NPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P03P4L04AKSA1

IPP80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies
457 -

RFQ

IPP80P03P4L04AKSA1

データシート

Tube OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004PBF

IRL1004PBF

MOSFET N-CH 40V 130A TO220AB

Infineon Technologies
2,206 -

RFQ

IRL1004PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410PBF

IRFB4410PBF

MOSFET N-CH 100V 88A TO220AB

Infineon Technologies
7,510 -

RFQ

IRFB4410PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
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20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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