写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFB3306PBFMOSFET N-CH 60V 120A TO220AB Infineon Technologies |
11,574 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BSC036NE7NS3GATMA1MOSFET N-CH 75V 100A TDSON Infineon Technologies |
8,209 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 3.6mOhm @ 50A, 10V | 3.8V @ 110µA | 63.4 nC @ 10 V | ±20V | 4400 pF @ 37.5 V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFP150MPBFMOSFET N-CH 100V 42A TO247AC Infineon Technologies |
1,262 | - |
RFQ |
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Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP12CN10LGXKSA1MOSFET N-CH 100V 69A TO220-3 Infineon Technologies |
1,260 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 69A (Tc) | 4.5V, 10V | 12mOhm @ 69A, 10V | 2.4V @ 83µA | 58 nC @ 10 V | ±20V | 5600 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP9140NPBFMOSFET P-CH 100V 23A TO247AC Infineon Technologies |
3,776 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 13A, 10V | 4V @ 250µA | 97 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPS60R3K4CEAKMA1CONSUMER Infineon Technologies |
2,837 | - |
RFQ |
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Bulk,Tube | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD090N03LGBTMA1MOSFET N-CH 30V 40A TO252-3 Infineon Technologies |
3,995 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB031N08N5ATMA1MOSFET N-CH 80V 120A D2PAK Infineon Technologies |
7,795 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.1mOhm @ 100A, 10V | 3.8V @ 108µA | 87 nC @ 10 V | ±20V | 6240 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFB7734PBFMOSFET N-CH 75V 183A TO220AB Infineon Technologies |
9,901 | - |
RFQ |
![]() データシート |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF4905LPBFMOSFET P-CH 55V 42A TO262 Infineon Technologies |
8,601 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFI4410ZPBFMOSFET N-CH 100V 43A TO220AB FP Infineon Technologies |
2,297 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 10V | 9.3mOhm @ 26A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±30V | 4910 pF @ 50 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF1324PBFMOSFET N-CH 24V 195A TO220AB Infineon Technologies |
4,505 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.5mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF135B203MOSFET N-CH 135V 129A TO220-3 Infineon Technologies |
1,991 | - |
RFQ |
![]() データシート |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 135 V | 129A (Tc) | 10V | 8.4mOhm @ 77A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 9700 pF @ 50 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF1405ZPBFMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
2,685 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB260NPBFMOSFET N-CH 200V 56A TO220AB Infineon Technologies |
934 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 40mOhm @ 34A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 4220 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP60R180P7XKSA1MOSFET N-CH 650V 18A TO220-3 Infineon Technologies |
2,000 | - |
RFQ |
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Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP064NPBFMOSFET N-CH 55V 110A TO247AC Infineon Technologies |
7,733 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP80P03P4L04AKSA1MOSFET P-CH 30V 80A TO220-3 Infineon Technologies |
457 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRL1004PBFMOSFET N-CH 40V 130A TO220AB Infineon Technologies |
2,206 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100 nC @ 4.5 V | ±16V | 5330 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB4410PBFMOSFET N-CH 100V 88A TO220AB Infineon Technologies |
7,510 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |