写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPC60R380E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,800 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R380E6X7SA1MOSFET N-CH Infineon Technologies |
3,792 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R520E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,559 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPC60R600E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,423 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPD135N03LGBTMA1LV POWER MOS Infineon Technologies |
2,097 | - |
RFQ |
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Tape & Reel (TR) | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC60R950C6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,435 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPS50R520CPAKMA1MOSFET N-CH 500V 7.1A TO251-3 Infineon Technologies |
3,906 | - |
RFQ |
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Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPS70R2K0CEE8211MOSFET N-CH Infineon Technologies |
3,226 | - |
RFQ |
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Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPW20N60C3E8177FKSA1MOSFET N-CH Infineon Technologies |
240,092 | - |
RFQ |
Bulk,Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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SS05N70AKMA1MOSFET N-CH Infineon Technologies |
2,412 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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SS07N70AKMA1MOSFET N-CH Infineon Technologies |
63,000 | - |
RFQ |
Bulk,Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IRF300P227MOSFET N-CH 300V 50A TO247AC Infineon Technologies |
144 | - |
RFQ |
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Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 40mOhm @ 30A, 10V | 4V @ 270µA | 107 nC @ 10 V | ±20V | 4893 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPW60R070CFD7XKSA1MOSFET N-CH 650V 31A TO247-3 Infineon Technologies |
877 | - |
RFQ |
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Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMW120R350M1HXKSA1SICFET N-CH 1.2KV 4.7A TO247-3 Infineon Technologies |
101 | - |
RFQ |
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Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | 15V, 18V | 455mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3 nC @ 18 V | +23V, -7V | 182 pF @ 800 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BSC079N03LSCGATMA1MOSFET N-CH 30V 14A/50A TDSON Infineon Technologies |
3,308 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 50A (Tc) | 4.5V, 10V | 7.9mOhm @ 30A, 10V | 2.2V @ 250µA | 19 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IMW120R220M1HXKSA1SICFET N-CH 1.2KV 13A TO247-3 Infineon Technologies |
210 | - |
RFQ |
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Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 286mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | +23V, -7V | 289 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP60R060C7XKSA1MOSFET N-CH 600V 35A TO220-3 Infineon Technologies |
347 | - |
RFQ |
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Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SPD04N60C3MOSFET N-CH 600V 4.5A TO252-3 Infineon Technologies |
2,383 | - |
RFQ |
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Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SPD07N60C3MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
2,678 | - |
RFQ |
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Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPI90R800C3MOSFET N-CH 900V 6.9A TO262-3 Infineon Technologies |
2,241 | - |
RFQ |
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Bulk,Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |