トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPC95R1K2P7X7SA1

IPC95R1K2P7X7SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,722 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPC95R450P7X7SA1

IPC95R450P7X7SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,423 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPA105N15N3GXKSA1

IPA105N15N3GXKSA1

MOSFET N-CH 150V 37A TO220-FP

Infineon Technologies
318 -

RFQ

IPA105N15N3GXKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 37A (Tc) 8V, 10V 10.5mOhm @ 37A, 10V 4V @ 160µA 55 nC @ 10 V ±20V 4300 pF @ 75 V - 40.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS65R1K0CEAKMA2

IPS65R1K0CEAKMA2

MOSFET N-CH 650V 7.2A TO251-3

Infineon Technologies
3,341 -

RFQ

IPS65R1K0CEAKMA2

データシート

Tube CoolMOS™ CE Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R125C6FKSA1

IPW60R125C6FKSA1

MOSFET N-CH 600V 30A TO247-3

Infineon Technologies
360 -

RFQ

IPW60R125C6FKSA1

データシート

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R070CFD7XKSA1

IPP60R070CFD7XKSA1

MOSFET N-CH 650V 31A TO220-3

Infineon Technologies
4,880 -

RFQ

IPP60R070CFD7XKSA1

データシート

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW24N60C3FKSA1

SPW24N60C3FKSA1

MOSFET N-CH 650V 24.3A TO247-3

Infineon Technologies
2,535 -

RFQ

SPW24N60C3FKSA1

データシート

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24.3A (Tc) 10V 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 135 nC @ 10 V ±20V 3000 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD050N03LGBTMA1

IPD050N03LGBTMA1

MOSFET N-CH 30V 50A TO252-31

Infineon Technologies
2,311 -

RFQ

IPD050N03LGBTMA1

データシート

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R099CPAFKSA1

IPW60R099CPAFKSA1

MOSFET N-CH 600V 31A TO247-3

Infineon Technologies
143 -

RFQ

IPW60R099CPAFKSA1

データシート

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 105mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -40°C ~ 150°C (TJ) Through Hole
IMZ120R350M1HXKSA1

IMZ120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-4

Infineon Technologies
234 -

RFQ

IMZ120R350M1HXKSA1

データシート

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) 15V, 18V 350mOhm @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V 182 pF @ 800 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP410N30NAKSA1

IPP410N30NAKSA1

MOSFET N-CH 300V 44A TO220-3

Infineon Technologies
292 -

RFQ

IPP410N30NAKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) 10V 41mOhm @ 44A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7180 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD25DP06LMATMA1

IPD25DP06LMATMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies
3,100 -

RFQ

IPD25DP06LMATMA1

データシート

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V 2V @ 270µA 13.8 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD25DP06NMATMA1

IPD25DP06NMATMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies
3,912 -

RFQ

IPD25DP06NMATMA1

データシート

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 10V 250mOhm @ 6.5A, 10V 4V @ 270µA 10.6 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R115CFD7AAKSA1

IPP65R115CFD7AAKSA1

MOSFET N-CH 650V 21A TO220-3

Infineon Technologies
432 -

RFQ

IPP65R115CFD7AAKSA1

データシート

Tube Automotive, AEC-Q101, CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPW60R090CFD7XKSA1

IPW60R090CFD7XKSA1

MOSFET N-CH 600V 25A TO247-3

Infineon Technologies
119 -

RFQ

IPW60R090CFD7XKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R099CFD7AAKSA1

IPP65R099CFD7AAKSA1

MOSFET N-CH 650V 24A TO220-3

Infineon Technologies
346 -

RFQ

IPP65R099CFD7AAKSA1

データシート

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 99mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP60R022S7XKSA1

IPP60R022S7XKSA1

MOSFET N-CH 600V 23A TO220-3

Infineon Technologies
964 -

RFQ

Tube CoolMOS™S7 Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5639 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R060M1HXKSA1

IMZ120R060M1HXKSA1

SICFET N-CH 1.2KV 36A TO247-4

Infineon Technologies
1,074 -

RFQ

IMZ120R060M1HXKSA1

データシート

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 15V, 18V 78mOhm @ 13A, 18V 5.7V @ 5.6mA 31 nC @ 18 V +23V, -7V 1060 pF @ 800 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZA65R048M1HXKSA1

IMZA65R048M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
1,432 -

RFQ

Tube - Active - - - 39A (Tc) - - - - - - - - - -
IAUZ18N10S5L420ATMA1

IAUZ18N10S5L420ATMA1

MOSFET N-CH 100V 18A TSDSON-8-32

Infineon Technologies
2,419 -

RFQ

IAUZ18N10S5L420ATMA1

データシート

Tape & Reel (TR) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 4.5V, 10V 42mOhm @ 9A, 10V 2.2V @ 8µA 8 nC @ 10 V ±20V 470 pF @ 50 V - 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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20,000.000 標準製品ユニット
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