写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IRFU5505PBFMOSFET P-CH 55V 18A IPAK Infineon Technologies |
3,311 | - |
RFQ |
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Bulk,Tube | HEXFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPW65R048CFDAFKSA1MOSFET N-CH 650V 63.3A TO247-3 Infineon Technologies |
221 | - |
RFQ |
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Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63.3A (Tc) | 10V | 48mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 7440 pF @ 100 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IGO60R070D1AUMA1GANFET N-CH 600V 31A 20DSO Infineon Technologies |
1,405 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IGOT60R070D1AUMA1GANFET N-CH 600V 31A 20DSO Infineon Technologies |
3,056 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IGT60R070D1ATMA1GANFET N-CH 600V 31A 8HSOF Infineon Technologies |
3,207 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IGT60R190D1SATMA1GANFET N-CH 600V 12.5A 8HSOF Infineon Technologies |
773 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 12.5A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 55.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPWS65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 Infineon Technologies |
208 | - |
RFQ |
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Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IPWS65R050CFD7AXKSA1MOSFET N-CH 650V 45A TO247-3-41 Infineon Technologies |
106 | - |
RFQ |
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Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IPW65R035CFD7AXKSA1MOSFET N-CH 650V 63A TO247-3-41 Infineon Technologies |
239 | - |
RFQ |
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Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63A (Tc) | 10V | 35mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IPD040N03LGBTMA1MOSFET N-CH 30V 90A TO252-31 Infineon Technologies |
3,825 | - |
RFQ |
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Tape & Reel (TR) | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IAUC26N10S5L245ATMA1MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies |
3,066 | - |
RFQ |
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Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Tj) | 4.5V, 10V | 24.5mOhm @ 13A, 10V | 2.2V @ 13µA | 12 nC @ 10 V | ±20V | 762 pF @ 50 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF6712STRPBFMOSFET N-CH 25V 17A DIRECTFET Infineon Technologies |
4,876 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 68A (Tc) | 4.5V, 10V | 4.9mOhm @ 17A, 10V | 2.4V @ 50µA | 18 nC @ 4.5 V | ±20V | 1570 pF @ 13 V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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BSC882N03LSGATMA1MOSFET N-CH 34V 8TDSON Infineon Technologies |
3,443 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 34 V | - | 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 46 nC @ 10 V | ±20V | 3700 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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IPU80R2K4P7AKMA1MOSFET N-CH 800V 2.5A TO251-3 Infineon Technologies |
2,071 | - |
RFQ |
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Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5 nC @ 10 V | ±20V | 150 pF @ 500 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IAUS300N08S5N014ATMA1MOSFET N-CH 80V 300A HSOG-8 Infineon Technologies |
2,709 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187 nC @ 10 V | ±20V | 13178 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IGLD60R070D1AUMA1GANFET N-CH 600V 15A LSON-8 Infineon Technologies |
2,719 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD350N06LGBUMA1MOSFET N-CH 60V 29A TO252-3 Infineon Technologies |
2,706 | - |
RFQ |
Tape & Reel (TR) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 2V @ 28µA | 13 nC @ 5 V | ±20V | 800 pF @ 30 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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IPD80R2K0P7ATMA1MOSFET N-CH 800V 3A TO252-3 Infineon Technologies |
2,000 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9 nC @ 10 V | ±20V | 175 pF @ 500 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPU80R1K4P7AKMA1MOSFET N-CH 800V 4A TO251-3 Infineon Technologies |
1,455 | - |
RFQ |
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Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10.05 nC @ 10 V | ±20V | 250 pF @ 500 V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF6662TRPBFMOSFET N-CH 100V 8.3A DIRECTFET Infineon Technologies |
7,560 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |