トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP126N10N3G

IPP126N10N3G

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies
3,735 -

RFQ

IPP126N10N3G

データシート

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) - 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
SP001434884

SP001434884

IPN60R1K0CEATMA1 - MOSFET

Infineon Technologies
3,439 -

RFQ

SP001434884

データシート

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP80N06S2-09

IPP80N06S2-09

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,740 -

RFQ

IPP80N06S2-09

データシート

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD03N60C3

SPD03N60C3

MOSFET N-CH 600V 3.2A TO252

Infineon Technologies
3,465 -

RFQ

SPD03N60C3

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) - 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP08N80C3

SPP08N80C3

SPP08N80 - 800V COOLMOS N-CHANNE

Infineon Technologies
2,976 -

RFQ

SPP08N80C3

データシート

Bulk * Active - - - - - - - - - - - - - -
SP001461194

SP001461194

IPN50R2K0CEATMA1 - MOSFET

Infineon Technologies
3,952 -

RFQ

SP001461194

データシート

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ST194E6716HTSA1

ST194E6716HTSA1

ST194 - SILICON N-CHANNEL MOSFET

Infineon Technologies
2,106 -

RFQ

ST194E6716HTSA1

データシート

Bulk * Active - - - - - - - - - - - - - -
AUIRFN8401TR

AUIRFN8401TR

AUIRFN8401 - 20V-40V N-CHANNEL A

Infineon Technologies
3,804 -

RFQ

AUIRFN8401TR

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP20N65C3XKSA1

SPP20N65C3XKSA1

HIGH POWER_LEGACY

Infineon Technologies
3,989 -

RFQ

SPP20N65C3XKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB407N30NATMA1

IPB407N30NATMA1

TRENCH >=100V

Infineon Technologies
3,396 -

RFQ

IPB407N30NATMA1

データシート

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) 10V 40.7mOhm @ 44A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7180 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R600C6XKSA1

IPI65R600C6XKSA1

IPI65R600 - 650V AND 700V COOLMO

Infineon Technologies
2,439 -

RFQ

IPI65R600C6XKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL65R650C6SE8211ATMA1

IPL65R650C6SE8211ATMA1

IPL65R650 - 650V AND 700V COOLMO

Infineon Technologies
3,853 -

RFQ

IPL65R650C6SE8211ATMA1

データシート

Bulk * Active - - - - - - - - - - - - - -
IRLR3717TRRPBF

IRLR3717TRRPBF

TRENCH <= 40V

Infineon Technologies
3,392 -

RFQ

IRLR3717TRRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.45V @ 250µA 31 nC @ 4.5 V ±20V 2830 pF @ 10 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR1010Z

AUIRFR1010Z

AUIRFR1010 - 55V-60V N-CHANNEL A

Infineon Technologies
2,879 -

RFQ

AUIRFR1010Z

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44VZSPBF

IRFZ44VZSPBF

IRFZ44 - TRENCH 40<-<100V

Infineon Technologies
3,089 -

RFQ

IRFZ44VZSPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

IPD60R1K4 - LOW POWER_LEGACY

Infineon Technologies
2,805 -

RFQ

IPD60R1K4C6ATMA1

データシート

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3806TRL

AUIRFS3806TRL

MOSFET_)40V,60V)

Infineon Technologies
3,061 -

RFQ

AUIRFS3806TRL

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,706 -

RFQ

AUIRF2804S-7P

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R280CEXKSA1

IPP50R280CEXKSA1

CONSUMER

Infineon Technologies
3,111 -

RFQ

IPP50R280CEXKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB38N20DPBF

IRFB38N20DPBF

IRFB38N20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,558 -

RFQ

IRFB38N20DPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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