写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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BSB014N04LX3GXUMA1MOSFET N-CH 40V 36A/180A 2WDSON Infineon Technologies |
2,340 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 36A (Ta), 180A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 196 nC @ 10 V | ±20V | 16900 pF @ 20 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
BSB015N04NX3GXUMA1MOSFET N-CH 40V 36A/180A 2WDSON Infineon Technologies |
2,214 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 36A (Ta), 180A (Tc) | 10V | 1.5mOhm @ 30A, 10V | 4V @ 250µA | 142 nC @ 10 V | ±20V | 12000 pF @ 20 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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BSC046N10NS3GATMA1MOSFET N-CH 100V 17A/100A TDSON Infineon Technologies |
2,050 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Ta), 100A (Tc) | 6V, 10V | 4.6mOhm @ 50A, 10V | 3.5V @ 120µA | 63 nC @ 10 V | ±20V | 4500 pF @ 50 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPA65R099C6XKSA1MOSFET N-CH 650V 38A TO220 Infineon Technologies |
157 | - |
RFQ |
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Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BSS123NH6327XTSA1MOSFET N-CH 100V 190MA SOT23-3 Infineon Technologies |
355,519 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 1.8V @ 13µA | 0.9 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPAN60R280P7SXKSA1MOSFET N-CH 650V 12A TO220 Infineon Technologies |
3,893 | - |
RFQ |
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Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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BSC120N12LSGATMA1TRENCH >=100V PG-TDSON-8 Infineon Technologies |
2,403 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Ta), 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IQE050N08NM5ATMA1TRENCH 40<-<100V PG-TSON-8 Infineon Technologies |
2,540 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 101A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | 3.8V @ 49µA | 43.2 nC @ 10 V | ±20V | 2900 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IQE050N08NM5CGATMA1TRENCH 40<-<100V PG-TTFN-9 Infineon Technologies |
3,981 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 101A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | 3.8V @ 49µA | 43.2 nC @ 10 V | ±20V | 2900 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
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IPB60R299CPN-CHANNEL POWER MOSFET Infineon Technologies |
2,546 | - |
RFQ |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IPP80R1K2P7XKSA1MOSFET N-CH 800V 4.5A TO220-3 Infineon Technologies |
2,011 | - |
RFQ |
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Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11 nC @ 10 V | ±20V | 300 pF @ 500 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB65R099C6ATMA1MOSFET N-CH 650V 38A D2PAK Infineon Technologies |
3,609 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPB90R340C3ATMA1MOSFET N-CH 900V 15A D2PAK Infineon Technologies |
3,896 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD65R1K4CFDBTMA1MOSFET N-CH 650V 2.8A TO252-3 Infineon Technologies |
2,651 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10 nC @ 10 V | ±20V | 262 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD65R250C6XTMA1MOSFET N-CH 650V 16.1A TO252-3 Infineon Technologies |
3,566 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 16.1A (Tc) | 10V | 250mOhm @ 4.4A, 10V | 3.5V @ 400µA | 44 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 208.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD65R950CFDBTMA1MOSFET N-CH 650V 3.9A TO252-3 Infineon Technologies |
3,876 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1 nC @ 10 V | ±20V | 380 pF @ 100 V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPI65R099C6XKSA1MOSFET N-CH 650V 38A TO262-3 Infineon Technologies |
8,915 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPI65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO262-3 Infineon Technologies |
459 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP60R074C6XKSA1MOSFET N-CH 600V 57.7A TO220-3 Infineon Technologies |
2,683 | - |
RFQ |
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Bulk,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 57.7A (Tc) | 10V | 74mOhm @ 21A, 10V | 3.5V @ 1.4mA | 138 nC @ 10 V | ±20V | 3020 pF @ 100 V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP60R1K4C6XKSA1MOSFET N-CH 600V 3.2A TO220-3 Infineon Technologies |
19,186 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 1.1 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |