写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP65R074C6XKSA1MOSFET N-CH 650V 57.7A TO220-3 Infineon Technologies |
3,788 | - |
RFQ |
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Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 57.7A (Tc) | 10V | 74mOhm @ 13.9A, 10V | 3.5V @ 1.4mA | 17 nC @ 10 V | ±20V | 3020 pF @ 100 V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP65R099C6XKSA1MOSFET N-CH 650V 38A TO220-3 Infineon Technologies |
2,889 | - |
RFQ |
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Bulk,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 15 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPS65R1K4C6AKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
3,080 | - |
RFQ |
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Bulk,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPU50R1K4CEBKMA1MOSFET N-CH 500V 3.1A TO251-3 Infineon Technologies |
2,734 | - |
RFQ |
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Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2 nC @ 10 V | ±20V | 178 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPU50R2K0CEBKMA1MOSFET N-CH 500V 2.4A TO251-3 Infineon Technologies |
43,033 | - |
RFQ |
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Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6 nC @ 10 V | ±20V | 124 pF @ 100 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPU50R3K0CEBKMA1MOSFET N-CH 500V 1.7A TO251-3 Infineon Technologies |
25,539 | - |
RFQ |
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Tube,Tube | CoolMOS™ CE | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPU60R2K0C6BKMA1MOSFET N-CH 600V 2.4A TO251-3 Infineon Technologies |
353,761 | - |
RFQ |
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Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPU60R600C6BKMA1MOSFET N-CH 600V 7.3A TO251-3 Infineon Technologies |
2,432 | - |
RFQ |
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Tube | CoolMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPU60R950C6BKMA1MOSFET N-CH 600V 4.4A TO251-3 Infineon Technologies |
3,955 | - |
RFQ |
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Tube | CoolMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 1.5 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2N7002H6327XTSA2MOSFET N-CH 60V 300MA SOT23-3 Infineon Technologies |
398,938 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6 nC @ 10 V | ±20V | 20 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSS84PH6433XTMA1MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies |
3,237 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 60 V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5 nC @ 10 V | ±20V | 19 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFU3410PBFMOSFET N-CH 100V 31A IPAK Infineon Technologies |
3,669 | - |
RFQ |
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Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IQE065N10NM5CGATMA1TRENCH >=100V PG-TTFN-9 Infineon Technologies |
2,793 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 85A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 3.8V @ 48µA | 42 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
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IPB160N04S4H1ATMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
2,085 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 110µA | 137 nC @ 10 V | ±20V | 10920 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB048N06LGN-CHANNEL POWER MOSFET Infineon Technologies |
2,560 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF3205ZLPBFMOSFET N-CH 55V 75A TO262 Infineon Technologies |
2,612 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF6728MTR1PBFMOSFET N-CH 30V 23A DIRECTFET Infineon Technologies |
2,574 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 42 nC @ 4.5 V | ±20V | 4110 pF @ 15 V | - | 2.1W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRF6810STR1PBFMOSFET N CH 25V 16A S1 Infineon Technologies |
2,186 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 16A, 10V | 2.1V @ 25µA | 11 nC @ 4.5 V | ±16V | 1038 pF @ 13 V | - | 2.1W (Ta), 20W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRF6892STR1PBFMOSFET N-CH 25V 28A DIRECTFET Infineon Technologies |
3,211 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta), 125A (Tc) | 4.5V, 10V | 1.7mOhm @ 28A, 10V | 2.1V @ 50µA | 25 nC @ 4.5 V | ±16V | 2510 pF @ 13 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRF6893MTR1PBFMOSFET N-CH 25V 29A DIRECTFET Infineon Technologies |
3,496 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 168A (Tc) | 4.5V, 10V | 1.6mOhm @ 29A, 10V | 2.1V @ 100µA | 38 nC @ 4.5 V | ±16V | 3480 pF @ 13 V | - | 2.1W (Ta), 69W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |