写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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BSC025N08LS5ATMA1MOSFET N-CH 80V 100A TDSON-8-7 Infineon Technologies |
2,183 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.3V @ 115µA | 55 nC @ 4.5 V | ±20V | 7500 pF @ 40 V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IAUC120N04S6N006ATMA1IAUC120N04S6N006ATMA1 Infineon Technologies |
2,923 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tj) | 7V, 10V | 0.6mOhm @ 60A, 10V | 3V @ 130µA | 151 nC @ 10 V | ±20V | 10117 pF @ 25 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB120P04P404ATMA1MOSFET P-CH 40V 120A D2PAK Infineon Technologies |
3,083 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 340µA | 205 nC @ 10 V | ±20V | 14790 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BSS314PEH6327XTSA1MOSFET P-CH 30V 1.5A SOT23-3 Infineon Technologies |
71,971 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9 nC @ 10 V | ±20V | 294 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSS806NH6327XTSA1MOSFET N-CH 20V 2.3A SOT23-3 Infineon Technologies |
124,165 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.3A (Ta) | 1.8V, 2.5V | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7 nC @ 2.5 V | ±8V | 529 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRLML6246TRPBFMOSFET N-CH 20V 4.1A SOT23 Infineon Technologies |
70,815 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.1A (Ta) | 2.5V, 4.5V | 46mOhm @ 4.1A, 4.5V | 1.1V @ 5µA | 3.5 nC @ 4.5 V | ±12V | 290 pF @ 16 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRLML6346TRPBFMOSFET N-CH 30V 3.4A SOT23 Infineon Technologies |
229,621 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.4A (Ta) | 2.5V, 4.5V | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.9 nC @ 4.5 V | ±12V | 270 pF @ 24 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRLML2803TRPBFMOSFET N-CH 30V 1.2A SOT23 Infineon Technologies |
539,560 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 910mA, 10V | 1V @ 250µA | 5 nC @ 10 V | ±20V | 85 pF @ 25 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPL65R200CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
2,068 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 200mOhm @ 5.2A, 10V | 4.5V @ 260µA | 23 nC @ 10 V | ±20V | 1044 pF @ 400 V | - | 81W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRFS75347PPBFHEXFET POWER MOSFET Infineon Technologies |
2,223 | - |
RFQ |
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Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300 nC @ 10 V | ±20V | 9990 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB021N06N3GN-CHANNEL POWER MOSFET Infineon Technologies |
2,677 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA60R190E6600V 0.19OHM N-CHANNEL MOSFET Infineon Technologies |
2,476 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB200N15N3N-CHANNEL POWER MOSFET Infineon Technologies |
3,639 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRLML6302TRPBFMOSFET P-CH 20V 780MA SOT23 Infineon Technologies |
308,726 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 780mA (Ta) | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6 nC @ 4.45 V | ±12V | 97 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRLML5103TRPBFMOSFET P-CH 30V 760MA SOT23 Infineon Technologies |
269,031 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 760mA (Ta) | 4.5V, 10V | 600mOhm @ 600mA, 10V | 1V @ 250µA | 5.1 nC @ 10 V | ±20V | 75 pF @ 25 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSP149H6327XTSA1MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies |
9,284 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14 nC @ 5 V | ±20V | 430 pF @ 25 V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSC022N04LSATMA1MOSFET N-CH 40V 100A TDSON-8-6 Infineon Technologies |
9,880 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2V @ 250µA | 37 nC @ 10 V | ±20V | 2600 pF @ 20 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSC0501NSIATMA1MOSFET N-CH 30V 29A/100A TDSON Infineon Technologies |
15,000 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2V @ 250µA | 33 nC @ 10 V | ±20V | 2200 pF @ 15 V | Schottky Diode (Body) | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSC0702LSATMA1MOSFET N-CH 60V 100A SUPERSO8 Infineon Technologies |
2,374 | - |
RFQ |
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Cut Tape (CT) | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2.3V @ 49µA | 30 nC @ 4.5 V | ±20V | 4400 pF @ 30 V | Standard | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSZ019N03LSATMA1MOSFET N-CH 30V 22A . 40A TSDSON Infineon Technologies |
14,627 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta). 40A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2V @ 250µA | 44 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |