写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP330P10NMAKSA1TRENCH >=100V PG-TO220-3 Infineon Technologies |
2,860 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Ta), 62A (Tc) | 10V | 33mOhm @ 53A, 10V | 4V @ 5.55mA | 236 nC @ 10 V | ±20V | 11000 pF @ 50 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMBG120R350M1HXTMA1SICFET N-CH 1.2KV 4.7A TO263 Infineon Technologies |
3,447 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | - | 468mOhm @ 2A, 18V | 5.7V @ 1mA | 5.9 nC @ 18 V | +18V, -15V | 196 pF @ 800 V | Standard | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPTG210N25NM3FDATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
2,926 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.7A (Ta), 77A (Tc) | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 125 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPP60R125P6XKSA1MOSFET N-CH 600V 30A TO220-3 Infineon Technologies |
2,671 | - |
RFQ |
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Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMBG65R107M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
2,870 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPP65R110CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
2,484 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 110mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFB8409MOSFET N-CH 40V 195A TO220AB Infineon Technologies |
3,721 | - |
RFQ |
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Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPDQ60R065S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
2,206 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 12V | 65mOhm @ 8A, 12V | 4.5V @ 490µA | 51 nC @ 12 V | ±20V | 1932 pF @ 300 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPW65R125CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
3,008 | - |
RFQ |
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Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 125mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMBG65R083M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
2,423 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IRFHM7194TRPBFMOSFET N-CH 100V 9.3A/34A 8PQFN Infineon Technologies |
2,590 | - |
RFQ |
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Tape & Reel (TR) | FASTIRFET™, HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.3A (Ta), 34A (Tc) | 10V | 16.4mOhm @ 20A, 10V | 3.6V @ 50µA | 19 nC @ 10 V | ±20V | 733 pF @ 50 V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRLZ24NSTRLMOSFET N-CH 55V 18A D2PAK Infineon Technologies |
2,855 | - |
RFQ |
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Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF3707ZSTRLPBFMOSFET N-CH 30V 59A D2PAK Infineon Technologies |
2,505 | - |
RFQ |
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Tape & Reel (TR) | HEXFET®, StrongIRFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFH7184TRPBFMOSFET N-CH 100V 20A/128A PQFN Infineon Technologies |
3,962 | - |
RFQ |
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Tape & Reel (TR) | FASTIRFET™, HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Ta), 128A (Tc) | 10V | 4.8mOhm @ 50A, 10V | 3.6V @ 150µA | 54 nC @ 10 V | ±20V | 2320 pF @ 50 V | - | 3.9W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFH7190TRPBFMOSFET N-CH 100V 15A/82A PQFN Infineon Technologies |
2,295 | - |
RFQ |
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Tape & Reel (TR) | FASTIRFET™, HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Ta), 82A (Tc) | 10V | 7.5mOhm @ 49A, 10V | 3.6V @ 100µA | 39 nC @ 10 V | ±20V | 1685 pF @ 50 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFR7540TRLPBFMOSFET N-CH 60V 90A DPAK Infineon Technologies |
3,589 | - |
RFQ |
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Tape & Reel (TR) | HEXFET®, StrongIRFET™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4360 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFSL7437TRLPBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
3,060 | - |
RFQ |
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Tape & Reel (TR) | HEXFET®, StrongIRFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPW65R145CFD7AXKSA1MOSFET N-CH 650V 17A TO247-3 Infineon Technologies |
3,089 | - |
RFQ |
![]() データシート |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | - | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IPA60R099P6XKSA1MOSFET N-CH 600V 37.9A TO220-FP Infineon Technologies |
3,976 | - |
RFQ |
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Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPW65R110CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
2,146 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 110mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |