写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPU60R1K5CEAKMA1MOSFET N-CH 600V 3.1A TO251-3 Infineon Technologies |
3,965 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CE | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.1A (Tc) | - | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | - | 200 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP65R065C7XKSA1MOSFET N-CH 650V 33A TO220-3 Infineon Technologies |
2,440 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPW65R041CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
3,893 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IMBG65R039M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
3,997 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IMBG120R060M1HXTMA1SICFET N-CH 1.2KV 36A TO263 Infineon Technologies |
2,638 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | - | 83mOhm @ 13A, 18V | 5.7V @ 5.6mA | 34 nC @ 18 V | +18V, -15V | 1145 pF @ 800 V | Standard | 181W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
SPW35N60CFDFKSA1MOSFET N-CH 600V 34.1A TO247-3 Infineon Technologies |
3,505 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 34.1A (Tc) | 10V | 118mOhm @ 21.6A, 10V | 5V @ 1.9mA | 212 nC @ 10 V | ±20V | 5060 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRFP4668PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
2,551 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 241 nC @ 10 V | ±30V | 10720 pF @ 50 V | - | 520W | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPW60R075CPFKSA1MOSFET N-CH 650V 39A TO247-3 Infineon Technologies |
2,299 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | ±20V | 4000 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IGOT60R070D1AUMA3GANFET N-CH Infineon Technologies |
2,677 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | CoolGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IMBG65R030M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
2,820 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPDQ60R022S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
2,247 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IPZA65R029CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
2,685 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPW65R041CFDFKSA2MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies |
2,568 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
AIMW120R080M1XKSA11200V COOLSIC MOSFET PG-TO247-3 Infineon Technologies |
2,232 | - |
RFQ |
![]() データシート |
Tube | Automotive, AEC-Q101, CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 15V | 104mOhm @ 13A, 15V | 5.7V @ 5.6mA | 28 nC @ 15 V | +20V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPA60R330P6XKSA1MOSFET N-CH 600V 12A TO220-FP Infineon Technologies |
2,100 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP60R230P6XKSA1MOSFET N-CH 600V 16.8A TO220-3 Infineon Technologies |
3,565 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP60R330P6XKSA1MOSFET N-CH 600V 12A TO220-3 Infineon Technologies |
3,523 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP60R380P6XKSA1MOSFET N-CH 600V 10.6A TO220-3 Infineon Technologies |
2,921 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPW60R230P6FKSA1MOSFET N-CH 600V 16.8A TO247-3 Infineon Technologies |
2,034 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPW60R330P6FKSA1MOSFET N-CH 600V 12A TO247-3 Infineon Technologies |
3,410 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |