トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP80N04S2H4AKSA2

IPP80N04S2H4AKSA2

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
3,832 -

RFQ

IPP80N04S2H4AKSA2

データシート

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2H5AKSA2

IPP80N06S2H5AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
33,000 -

RFQ

IPP80N06S2H5AKSA2

データシート

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L06AKSA2

IPP80N06S2L06AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
18,500 -

RFQ

IPP80N06S2L06AKSA2

データシート

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.3mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L09AKSA2

IPP80N06S2L09AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
27,000 -

RFQ

IPP80N06S2L09AKSA2

データシート

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 2620 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L11AKSA2

IPP80N06S2L11AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
25,500 -

RFQ

IPP80N06S2L11AKSA2

データシート

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2LH5AKSA2

IPP80N06S2LH5AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
37,835 -

RFQ

IPP80N06S2LH5AKSA2

データシート

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2V @ 250µA 190 nC @ 10 V ±20V 5000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50R280CEATMA1

IPD50R280CEATMA1

MOSFET N-CH 500V 13A TO252-3

Infineon Technologies
2,051 -

RFQ

IPD50R280CEATMA1

データシート

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R450E6ATMA1

IPD60R450E6ATMA1

MOSFET N-CH 600V 9.2A TO252-3

Infineon Technologies
9,353 -

RFQ

IPD60R450E6ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF150P221AKMA1

IRF150P221AKMA1

MOSFET N-CH 150V 186A TO247-3

Infineon Technologies
3,041 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 186A (Tc) 10V 4.5mOhm @ 100A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 6000 pF @ 75 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R065S7XKSA1

IPP60R065S7XKSA1

HIGH POWER_NEW PG-TO220-3

Infineon Technologies
3,125 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPDQ60R040S7XTMA1

IPDQ60R040S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
2,190 -

RFQ

IPDQ60R040S7XTMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 272W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP4568PBFXKMA1

IRFP4568PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies
2,791 -

RFQ

IRFP4568PBFXKMA1

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF100P218AKMA1

IRF100P218AKMA1

MOSFET N-CH 100V 209A TO247AC

Infineon Technologies
2,173 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 209A (Tc) 6V, 10V 1.28mOhm @ 100A, 10V 3.8V @ 278µA 412 nC @ 10 V ±20V 24000 pF @ 50 V - 3.8W (Ta), 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R050CFD7AATMA1

IPB65R050CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies
2,316 -

RFQ

IPB65R050CFD7AATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±30V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP4668PBF

IRFP4668PBF

MOSFET N-CH 200V 130A TO247AC

Infineon Technologies
2,902 -

RFQ

IRFP4668PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 130A (Tc) 10V 9.7mOhm @ 81A, 10V 5V @ 250µA 241 nC @ 10 V ±30V 10720 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4468PBFXKMA1

IRFP4468PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies
2,235 -

RFQ

IRFP4468PBFXKMA1

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 290A (Tc) 10V 2.6mOhm @ 180A, 10V 4V @ 250µA 540 nC @ 10 V ±20V 19860 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R060CFD7XKSA1

IPW65R060CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
3,647 -

RFQ

IPW65R060CFD7XKSA1

データシート

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R040S7XKSA1

IPP60R040S7XKSA1

HIGH POWER_NEW PG-TO220-3

Infineon Technologies
3,169 -

RFQ

IPP60R040S7XKSA1

データシート

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 245W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD60R520C6ATMA1

IPD60R520C6ATMA1

MOSFET N-CH 600V 8.1A TO252-3

Infineon Technologies
2,761 -

RFQ

IPD60R520C6ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU60R1K0CEAKMA1

IPU60R1K0CEAKMA1

MOSFET N-CH 600V 4.3A TO251-3

Infineon Technologies
3,649 -

RFQ

IPU60R1K0CEAKMA1

データシート

Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) - 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V - 280 pF @ 100 V - - -40°C ~ 150°C (TJ) Through Hole
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