写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPW65R029CFD7XKSA1MOSFET N-CH 650V 69A TO247-3 Infineon Technologies |
3,289 | - |
RFQ |
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Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | - | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPL60R255P6AUMA1MOSFET N-CH 600V 15.9A 4VSON Infineon Technologies |
2,946 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.9A (Tc) | 10V | 255mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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BSP298H6327XUSA1MOSFET N-CH 400V 500MA SOT223-4 Infineon Technologies |
3,030 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 500mA (Ta) | 10V | 3Ohm @ 500mA, 10V | 4V @ 1mA | - | ±20V | 400 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSP300H6327XUSA1MOSFET N-CH 800V 190MA SOT223-4 Infineon Technologies |
2,744 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | - | ±20V | 230 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD25N06S4L30ATMA1MOSFET N-CH 60V 25A TO252-31 Infineon Technologies |
2,630 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 4.5V, 10V | 30mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3 nC @ 10 V | ±16V | 1220 pF @ 25 V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPP200N15N3GHKSA1MOSFET N-CH 150V 50A TO220-3 Infineon Technologies |
2,919 | - |
RFQ |
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Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31 nC @ 10 V | ±20V | 1820 pF @ 75 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BSG0812NDATMA1MOSFET N-CH 8TISON Infineon Technologies |
2,706 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD60R380P6BTMA1MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies |
2,772 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P6 | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50R950CEATMA1MOSFET N-CH 500V 4.3A TO252-3 Infineon Technologies |
3,741 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CE | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50R800CEATMA1MOSFET N CH 500V 5A TO252 Infineon Technologies |
2,390 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ CE | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50R650CEATMA1MOSFET N-CH 500V 6.1A TO252-3 Infineon Technologies |
2,725 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CE | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15 nC @ 10 V | ±20V | 342 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50R500CEATMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
2,458 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CE | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IGLD60R070D1AUMA3GANFET N-CH Infineon Technologies |
2,764 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IGT60R070D1ATMA4GANFET N-CH Infineon Technologies |
2,731 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPW90R120C3XKSA1MOSFET N-CH 900V 36A TO247-3 Infineon Technologies |
3,364 | - |
RFQ |
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Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPD50R380CEATMA1MOSFET N-CH 500V 14.1A TO252-3 Infineon Technologies |
2,114 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CE | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14.1A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IMBG65R022M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
3,323 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IMW120R040M1HXKSA1SIC DISCRETE Infineon Technologies |
3,812 | - |
RFQ |
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Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 15V, 18V | 54.4mOhm @ 19.3A, 18V | 5.2V @ 10mA | 39 nC @ 18 V | +20V, -5V | 1620 nF @ 25 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPZA65R018CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
3,721 | - |
RFQ |
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Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11660 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMBG120R030M1HXTMA1SICFET N-CH 1.2KV 56A TO263 Infineon Technologies |
3,509 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | - | 41mOhm @ 25A, 18V | 5.7V @ 11.5mA | 63 nC @ 18 V | +18V, -15V | 2290 pF @ 800 V | Standard | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |