写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP057N06N3GHKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
3,830 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82 nC @ 10 V | ±20V | 6600 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP052N06L3GHKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
2,607 | - |
RFQ |
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Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2.2V @ 58µA | 50 nC @ 4.5 V | ±20V | 8400 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP045N10N3GHKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
3,545 | - |
RFQ |
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Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP040N06N3GHKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
3,906 | - |
RFQ |
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Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP037N08N3GHKSA1MOSFET N-CH 80V 100A TO220-3 Infineon Technologies |
2,892 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP032N06N3GHKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
2,746 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP030N10N3GHKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
3,050 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP024N06N3GHKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
3,014 | - |
RFQ |
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Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275 nC @ 10 V | ±20V | 23000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SIPC26N60S5X1SA1MOSFET COOL MOS SAWED WAFER Infineon Technologies |
3,494 | - |
RFQ |
![]() データシート |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB60R230P6ATMA1MOSFET N-CH 600V 16.8A TO263-3 Infineon Technologies |
2,367 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IMZA120R020M1HXKSA1SIC DISCRETE Infineon Technologies |
3,833 | - |
RFQ |
![]() データシート |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 98A (Tc) | 15V, 18V | 26.9mOhm @ 41A, 18V | 5.2V @ 17.6mA | 83 nC @ 18 V | +20V, -5V | 3460 nF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMW120R014M1HXKSA1SIC DISCRETE Infineon Technologies |
2,381 | - |
RFQ |
![]() データシート |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 127A (Tc) | 15V, 18V | 18.4mOhm @ 54.3A, 18V | 5.2V @ 23.4mA | 110 nC @ 18 V | +20V, -5V | 4580 nF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMZA120R014M1HXKSA1SIC DISCRETE Infineon Technologies |
2,742 | - |
RFQ |
![]() データシート |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 127A (Tc) | 15V, 18V | 18.4mOhm @ 54.3A, 18V | 5.2V @ 23.4mA | 110 nC @ 18 V | +20V, -5V | 4580 nF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMW120R007M1HXKSA1SIC DISCRETE Infineon Technologies |
3,613 | - |
RFQ |
![]() データシート |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 225A (Tc) | 15V, 18V | 9.9mOhm @ 108A, 18V | 5.2V @ 47mA | 220 nC @ 18 V | +20V, -5V | 9170 nF @ 25 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMZA120R007M1HXKSA1SIC DISCRETE Infineon Technologies |
2,054 | - |
RFQ |
![]() データシート |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 225A (Tc) | 15V, 18V | 9.9mOhm @ 108A, 18V | 5.2V @ 47mA | 220 nC @ 18 V | +20V, -5V | 9170 nF @ 25 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP039N04LGHKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
2,747 | - |
RFQ |
![]() データシート |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP50R199CPHKSA1MOSFET N-CH 550V 17A TO220-3 Infineon Technologies |
2,834 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 550 V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP50R299CPHKSA1MOSFET N-CH 550V 12A TO220-3 Infineon Technologies |
3,931 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SPP07N60C3HKSA1MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies |
3,152 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SPP20N60CFDHKSA1MOSFET N-CH 650V 20.7A TO220-3 Infineon Technologies |
3,968 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |