トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPG20N06S4L11ATMA2

IPG20N06S4L11ATMA2

MOSFET_)40V,60V)

Infineon Technologies
2,348 -

RFQ

IPG20N06S4L11ATMA2

データシート

Bulk * Active - - - - - - - - - - - - - -
IPD60R1K5CEATMA1

IPD60R1K5CEATMA1

MOSFET N-CH 600V 3.1A TO252-3

Infineon Technologies
2,744 -

RFQ

IPD60R1K5CEATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH8324TR2PBF

IRFH8324TR2PBF

MOSFET N-CH 30V 23A/90A PQFN

Infineon Technologies
3,332 -

RFQ

IRFH8324TR2PBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 90A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.35V @ 50µA 31 nC @ 10 V ±20V 2380 pF @ 10 V - 3.6W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB02N60S5ATMA1

SPB02N60S5ATMA1

MOSFET N-CH 600V 1.8A TO263-3

Infineon Technologies
3,509 -

RFQ

SPB02N60S5ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD80R1K4P7

IPD80R1K4P7

800V, 1.4OHM, N-CHANNEL MOSFET

Infineon Technologies
3,050 -

RFQ

IPD80R1K4P7

データシート

Bulk * Active - - - - - - - - - - - - -
IPS80R1K4P7

IPS80R1K4P7

IPS80R1K4 - 800V COOLMOS N-CHANN

Infineon Technologies
2,346 -

RFQ

IPS80R1K4P7

データシート

Bulk * Active - - - - - - - - - - - - - -
SPA03N60C3XK

SPA03N60C3XK

SPA03N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
3,066 -

RFQ

SPA03N60C3XK

データシート

Bulk * Active - - - - - - - - - - - - - -
SPA03N60C3XKSA1

SPA03N60C3XKSA1

SPA03N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
3,708 -

RFQ

SPA03N60C3XKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 29.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISZ0901NLSATMA1

ISZ0901NLSATMA1

25V, N-CH MOSFET, LOGIC LEVEL, P

Infineon Technologies
10,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
BSC025N03MSG

BSC025N03MSG

BSC025N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,088 -

RFQ

BSC025N03MSG

データシート

Bulk * Active - - - - - - - - - - - - - -
IRFB7434PBF

IRFB7434PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
480 -

RFQ

IRFB7434PBF

データシート

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP019N08NF2SAKMA1

IPP019N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
2,199 -

RFQ

IPP019N08NF2SAKMA1

データシート

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 191A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3206GPBF

IRFB3206GPBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
169 -

RFQ

IRFB3206GPBF

データシート

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R225C7XKSA1

IPA65R225C7XKSA1

MOSFET N-CH 650V 7A TO220-FP

Infineon Technologies
2,050 -

RFQ

IPA65R225C7XKSA1

データシート

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP054NPBF

IRFP054NPBF

MOSFET N-CH 55V 81A TO247AC

Infineon Technologies
367 -

RFQ

IRFP054NPBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 81A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R600C6

IPP60R600C6

7.3A, 600V, 0.6OHM, N-CHANNEL MO

Infineon Technologies
3,219 -

RFQ

IPP60R600C6

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC014N03LSGATMA1

BSC014N03LSGATMA1

BSC014N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,262 -

RFQ

BSC014N03LSGATMA1

データシート

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2.2V @ 250µA 131 nC @ 10 V ±20V 10000 pF @ 15 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0910LSATMA1

BSZ0910LSATMA1

MOSFET N-CH 30V 18A/40A TSDSON

Infineon Technologies
3,304 -

RFQ

BSZ0910LSATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1100 pF @ 15 V - 2.1W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP048N04NG

IPP048N04NG

IPP048N04 - 12V-300V N-CHANNEL P

Infineon Technologies
2,205 -

RFQ

IPP048N04NG

データシート

Bulk * Active - - - - - - - - - - - - - -
IPD90N04S3-04

IPD90N04S3-04

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,442 -

RFQ

IPD90N04S3-04

データシート

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.6mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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