トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSZ0911LSATMA1

BSZ0911LSATMA1

MOSFET N-CH 30V 12A/40A TSDSON

Infineon Technologies
3,178 -

RFQ

BSZ0911LSATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 40A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 670 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC016N03LSG

BSC016N03LSG

BSC016N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,562 -

RFQ

BSC016N03LSG

データシート

Bulk * Active - - - - - - - - - - - - - -
IPB054N06N3G

IPB054N06N3G

IPB054N06 - 12V-300V N-CHANNEL P

Infineon Technologies
2,277 -

RFQ

IPB054N06N3G

データシート

Bulk * Active - - - - - - - - - - - - - -
AUIRLR2905

AUIRLR2905

AUIRLR2905 - 55V-60V N-CHANNEL A

Infineon Technologies
3,075 -

RFQ

AUIRLR2905

データシート

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7607TRPBFTR

IRF7607TRPBFTR

IRF7607 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,621 -

RFQ

IRF7607TRPBFTR

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL307SPH6327XTSA1

BSL307SPH6327XTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,937 -

RFQ

BSL307SPH6327XTSA1

データシート

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP120P04P4L03AKSA2

IPP120P04P4L03AKSA2

MOSFET_(20V,40V)

Infineon Technologies
2,315 -

RFQ

IPP120P04P4L03AKSA2

データシート

Bulk OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V +5V, -16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3708PBF

IRF3708PBF

IRF3708 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,964 -

RFQ

IRF3708PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

IPAN60R800CE - 600V COOLMOS N-CH

Infineon Technologies
3,359 -

RFQ

IPAN60R800CEXKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V Super Junction 27W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF7476TRPBF

IRF7476TRPBF

IRF7476 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,144 -

RFQ

IRF7476TRPBF

データシート

Bulk * Active - - - - - - - - - - - - - -
SPA11N80C3 E8209

SPA11N80C3 E8209

800V COOLMOS N-CHANNEL POWER MOS

Infineon Technologies
2,185 -

RFQ

SPA11N80C3 E8209

データシート

Bulk * Active - - - - - - - - - - - - - -
IPC90N04S53R6ATMA1

IPC90N04S53R6ATMA1

MOSFET_(20V,40V)

Infineon Technologies
2,396 -

RFQ

IPC90N04S53R6ATMA1

データシート

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 7V, 10V 3.6mOhm @ 45A, 10V 3.4V @ 23µA 32.6 nC @ 10 V ±20V 1950 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7379QTR

AUIRF7379QTR

AUIRF7379Q - 30V-55V DUAL N AND

Infineon Technologies
3,426 -

RFQ

AUIRF7379QTR

データシート

Bulk * Active - - - - - - - - - - - - - -
IPP60R180C7XKSA1

IPP60R180C7XKSA1

IPP60R180 - 13A, 600V, N-CHANEL

Infineon Technologies
3,940 -

RFQ

IPP60R180C7XKSA1

データシート

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R072M1HXKSA1

IMW65R072M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies
3,049 -

RFQ

IMW65R072M1HXKSA1

データシート

Bulk * Active - - - - - - - - - - - - - -
IPB030N08N3GATMA1

IPB030N08N3GATMA1

IPB030N08N3G - OPTLMOS N-CHANNEL

Infineon Technologies
2,316 -

RFQ

IPB030N08N3GATMA1

データシート

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW24N60CFDFKSA1

SPW24N60CFDFKSA1

HIGH POWER_LEGACY

Infineon Technologies
2,567 -

RFQ

SPW24N60CFDFKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21.7A (Tc) 10V 185mOhm @ 15.4A, 10V 5V @ 1.2mA 143 nC @ 10 V ±20V 3160 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R160P6

IPW60R160P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,237 -

RFQ

IPW60R160P6

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R095C7

IPW65R095C7

MOSFET N-CH 650V 24A TO247

Infineon Technologies
2,699 -

RFQ

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) - 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF9540N

AUIRF9540N

AUIRF9540 - 20V-150V P-CHANNEL A

Infineon Technologies
2,566 -

RFQ

AUIRF9540N

データシート

Bulk Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 388389390391392393394395...420Next»
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
日文版

ホーム

日文版

製品

日文版

電話

日文版

ユーザー