写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC0704LSATMA1MOSFET N-CH 60V 11A/47A TDSON Infineon Technologies |
2,677 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 47A (Tc) | 4.5V, 10V | 9.4mOhm @ 24A, 10V | 2.3V @ 14µA | 9.4 nC @ 4.5 V | ±20V | 1300 pF @ 30 V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSZ0909LSATMA1MOSFET N-CH 30V 19A/40A TSDSON Infineon Technologies |
3,687 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2V @ 250µA | 26 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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BSC016N03MSGBSC016N03 - 12V-300V N-CHANNEL P Infineon Technologies |
2,479 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BSZ12DN20NS3GBSZ12DN20 - 12V-300V N-CHANNEL P Infineon Technologies |
3,981 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD50N06S2-14IPD50N06 - 55V-60V N-CHANNEL AUT Infineon Technologies |
3,473 | - |
RFQ |
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 10V | 14.4mOhm @ 32A, 10V | 4V @ 80µA | 52 nC @ 10 V | ±20V | 1485 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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1IRF3710PBFIRF3710 - 100V HEXFET N-CHANNEL Infineon Technologies |
3,272 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BSS214NWH6327BSS214 - 250V-600V SMALL SIGNAL Infineon Technologies |
2,071 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BSC042N03LSGBSC042N03 - 12V-300V N-CHANNEL P Infineon Technologies |
3,349 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPW60R099CPMOSFET N-CH 600V 31A TO247-3-1 Infineon Technologies |
3,355 | - |
RFQ |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | - | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BSO201SPHBSO201 - 20V-250V P-CHANNEL POWE Infineon Technologies |
2,299 | - |
RFQ |
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Bulk | SIPMOS® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88 nC @ 4.5 V | ±12V | 9600 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSC080N03MSGBSC080N03 - 12V-300V N-CHANNEL P Infineon Technologies |
2,587 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP048N12N3GXKSA1MOSFET N-CH 120V 100A TO220-3 Infineon Technologies |
3,320 | - |
RFQ |
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Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 4.8mOhm @ 100A, 10V | 4V @ 230µA | 182 nC @ 10 V | ±20V | 12000 pF @ 60 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPW60R070P6600V, 0.07OHM, N-CHANNEL MOSFET Infineon Technologies |
3,821 | - |
RFQ |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100 nC @ 10 V | ±20V | 4750 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | |
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IPW60R330P6IPW60R330 - 600V COOLMOS N-CHANN Infineon Technologies |
3,297 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPD50R800CEIPD50R800 - 500V COOLMOS N-CHANN Infineon Technologies |
3,630 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD90N06S4L-05IPD90N06 - 55V-60V N-CHANNEL AUT Infineon Technologies |
3,691 | - |
RFQ |
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 4.6mOhm @ 90A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPP50R399CPIPP50R399 - 500V COOLMOS N-CHANN Infineon Technologies |
2,228 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP60R180C713A, 600V, 0.18OHM, N-CHANNEL MO Infineon Technologies |
2,168 | - |
RFQ |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRF6215AUIRF6215 - 20V-150V P-CHANNEL A Infineon Technologies |
3,925 | - |
RFQ |
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFSL3806PBFIRFSL3806 - 12V-300V N-CHANNEL P Infineon Technologies |
2,648 | - |
RFQ |
![]() データシート |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |